Authors : Iadanza S; Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland. .; Munster Technological University, Rossa Avenue, Bishopstown, Cork, Ireland. .

Source: Scientific reports [Sci Rep] 2022 Oct 12; Vol. 12 (1), pp. 17097. Date of Electronic Publication: 2022 Oct 12.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.

Authors : Lee SH; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-201, South Korea.; Park J

Source: Scientific reports [Sci Rep] 2022 Aug 24; Vol. 12 (1), pp. 14455. Date of Electronic Publication: 2022 Aug 24.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects.

Authors : Xu J; School of Mechanical Engineering, Jiangsu University of Science and Technology, Zhenjiang 212013, Jiangsu, China. .; Chen C

Source: Materials (Basel, Switzerland) [Materials (Basel)] 2017 Mar 03; Vol. 10 (3). Date of Electronic Publication: 2017 Mar 03.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Authors : Park JH; Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.; Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.

Source: Scientific reports [Sci Rep] 2016 Apr 21; Vol. 6, pp. 24734. Date of Electronic Publication: 2016 Apr 21.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods.

Authors : Lou S; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Zhu H

Source: Scientific reports [Sci Rep] 2015 Sep 14; Vol. 5, pp. 14084. Date of Electronic Publication: 2015 Sep 14.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

Authors : Yen LC; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. .; Tang MT

Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2014 Feb 25; Vol. 14 (3), pp. 3825-32. Date of Electronic Publication: 2014 Feb 25.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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Efficiency Improvement of Industrial Silicon Solar Cells by the POCl 3 Diffusion Process.

Authors : Xu X; Electrochemistry and Corrosion Laboratory, School of Mechanical Engineering, Changzhou University, Changzhou 213164, China.; Wu W

Source: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Feb 23; Vol. 16 (5). Date of Electronic Publication: 2023 Feb 23.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses.

Authors : Bronnikov K; Institute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, Russia.; Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, Russia.

Source: Materials (Basel, Switzerland) [Materials (Basel)] 2020 Nov 23; Vol. 13 (22). Date of Electronic Publication: 2020 Nov 23.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Methodology for Calculating the Damaged Surface and Its Relationship with Power Loss in Photovoltaic Modules by Electroluminescence Inspection for Corrective Maintenance.

Authors : Saborido-Barba N; Departamento de Ingeniería Eléctrica, Universidad de Cádiz, Avenida de la Universidad de Cádiz 10, 11519 Puerto Real, Cádiz, Spain.; García-López C

Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Feb 24; Vol. 24 (5). Date of Electronic Publication: 2024 Feb 24.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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Maximizing electrical output and reducing heat-related losses in photovoltaic thermal systems with a thorough examination of flow channel integration and nanofluid cooling.

Authors : Allehiany FM; Department of Mathematical Sciences, College of Applied Sciences, Umm Al-Qura University, Makkah, Saudi Arabia.; Memon AA

Source: Scientific reports [Sci Rep] 2023 Oct 08; Vol. 13 (1), pp. 16961. Date of Electronic Publication: 2023 Oct 08.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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