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Academic Journal

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  • Authors : Collier CP; Department of Chemistry and Biochemistry, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, CA 90095-1569, USA.; Mattersteig G

  • Source: Science (New York, N.Y.) [Science] 2000 Aug 18; Vol. 289 (5482), pp. 1172-5.Publisher: American Association for the Advancement of Science Country of Publication: United States NLM ID: 0404511 Publication Model: Print Cited Medium:

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Academic Journal

Fatigue failure in polysilicon not due to simple stress corrosion cracking.

  • Authors : Kahn H; Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106-7204, USA.; Ballarini R

  • Source: Science (New York, N.Y.) [Science] 2002 Nov 08; Vol. 298 (5596), pp. 1215-8.Publisher: American Association for the Advancement of Science Country of Publication: United States NLM ID: 0404511 Publication Model: Print Cited Medium:

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Academic Journal

Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction.

  • Authors : Kim DI; School of Materials Science & Engineering, Seoul National University ENG445, San 56-1, Shilim-dong, Kwanak-ku, Seoul 151-744, Korea. ; Oh KH

  • Source: Journal of microscopy [J Microsc] 2004 Aug; Vol. 215 (Pt 2), pp. 121-6.Publisher: Published for the Royal Microscopical Society by Blackwell Scientific Publications Country of Publication: England NLM ID: 0204522 Publication Model:

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Academic Journal

Solution-processed silicon films and transistors.

  • Authors : Shimoda T; Technology Platform Research Centre, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399-0293 Japan.; Matsuki Y

  • Source: Nature [Nature] 2006 Apr 06; Vol. 440 (7085), pp. 783-6.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 0410462 Publication Model: Print Cited Medium: Internet ISSN:

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Academic Journal

Towards fully integrated wireless impedimetric sensors.

  • Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2010; Vol. 10 (4), pp. 4071-82. Date of Electronic Publication: 2010 Apr 21.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1424-8220

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Academic Journal

Low-voltage, low-power, organic light-emitting transistors for active matrix displays.

  • Authors : McCarthy MA; Department of Physics, University of Florida, Gainesville, FL 32611, USA.; Liu B

  • Source: Science (New York, N.Y.) [Science] 2011 Apr 29; Vol. 332 (6029), pp. 570-3.Publisher: American Association for the Advancement of Science Country of Publication: United States NLM ID: 0404511 Publication Model: Print Cited Medium:

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Academic Journal

Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

  • Authors : Yen LC; Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. .; Tang MT

  • Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2014 Feb 25; Vol. 14 (3), pp. 3825-32. Date of Electronic Publication: 2014 Feb 25.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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Experimental Studies on the Flammability and Fire Hazards of Photovoltaic Modules.

  • Authors : Yang HY; State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, Anhui, China. .; Zhou XD

  • Source: Materials (Basel, Switzerland) [Materials (Basel)] 2015 Jul 09; Vol. 8 (7), pp. 4210-4225. Date of Electronic Publication: 2015 Jul 09.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods.

  • Authors : Lou S; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Zhu H

  • Source: Scientific reports [Sci Rep] 2015 Sep 14; Vol. 5, pp. 14084. Date of Electronic Publication: 2015 Sep 14.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Academic Journal

Electrostatic-Force-Assisted Dispensing Printing to Construct High-Aspect-Ratio of 0.79 Electrodes on a Textured Surface with Improved Adhesion and Contact Resistivity.

  • Authors : Shin DY; Department of Graphic Arts Information Engineering, Pukyong National University, 365, Sinseon-ro, Nam-gu, Busan, 608-739, Republic of Korea.; Yoo SS

  • Source: Scientific reports [Sci Rep] 2015 Nov 18; Vol. 5, pp. 16704. Date of Electronic Publication: 2015 Nov 18.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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