نتائج البحث

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.

• Authors : Kim D; School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.; Lee D

• Source: Scientific reports [Sci Rep] 2024 Dec 28; Vol. 14 (1), pp. 30873. Date of Electronic Publication: 2024 Dec 28.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Flexible Graphene Field-Effect Transistors and Their Application in Flexible Biomedical Sensing.

• Authors : Sun M; Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.; Wang S

• Source: Nano-micro letters [Nanomicro Lett] 2024 Oct 07; Vol. 17 (1), pp. 34. Date of Electronic Publication: 2024 Oct 07.Publisher: Springer Country of Publication: Germany NLM ID: 101727940 Publication Model: Electronic Cited Medium: Internet ISSN: 2150-5551

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Enhancing the Performance of MoS 2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance.

• Authors : Cao L; School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China.; Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China.

• Source: Molecules (Basel, Switzerland) [Molecules] 2024 Aug 23; Vol. 29 (17). Date of Electronic Publication: 2024 Aug 23.Publisher: MDPI Country of Publication: Switzerland NLM ID: 100964009 Publication Model: Electronic Cited Medium: Internet ISSN: 1420-3049

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Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC.

• Authors : Fadil D; University of Lille-IEMN CNRS UMR 8520, Avenue Poincaré, CS 60069, 59652 Villeneuve d'Ascq, France.; Departament d'Enginyeria Electrònica, Universitat Rovira I Virgili, 43007 Tarragona, Spain.

• Source: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Jul 18; Vol. 17 (14). Date of Electronic Publication: 2024 Jul 18.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Low-Cost Source Measure Unit (SMU) to Characterize Sensors Built on Graphene-Channel Field-Effect Transistors.

• Authors : Galanti AM; School of Chemical, Materials and Biomedical Engineering, College of Engineering, University of Georgia, Athens, GA 30602, USA.; Haidekker MA

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Jun 14; Vol. 24 (12). Date of Electronic Publication: 2024 Jun 14.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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Detection of α-Galactosidase A Reaction in Samples Extracted from Dried Blood Spots Using Ion-Sensitive Field Effect Transistors.

• Authors : Kuznetsov A; Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 32A Leninsky Prospekt, Moscow 119334, Russia.; Sheshil A

Subjects: alpha-Galactosidase*/alpha-Galactosidase*/alpha-Galactosidase*/blood ; Dried Blood Spot Testing*/Dried Blood Spot Testing*/Dried Blood Spot Testing*/methods ; Fabry Disease*/Fabry Disease*/Fabry Disease*/blood

• Source: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Jun 06; Vol. 24 (11). Date of Electronic Publication: 2024 Jun 06.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101204366 Publication Model: Electronic Cited Medium: Internet ISSN: 1424-8220

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High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing.

• Authors : Huang L; Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China.; Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.

• Source: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Mar 19; Vol. 17 (6). Date of Electronic Publication: 2024 Mar 19.Publisher: MDPI Country of Publication: Switzerland NLM ID: 101555929 Publication Model: Electronic Cited Medium: Print ISSN: 1996-1944 (Print)

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Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads.

• Authors : Yu E; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.; K GK

• Source: Scientific reports [Sci Rep] 2024 Apr 24; Vol. 14 (1), pp. 9426. Date of Electronic Publication: 2024 Apr 24.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Effect of fabrication process on contact resistance and channel in graphene field effect transistors.

• Authors : Khosravi Rad B; Optoelectronics and Nanophotonics Research Group, Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran.; Mehrfar AH

• Source: Scientific reports [Sci Rep] 2024 Apr 22; Vol. 14 (1), pp. 9190. Date of Electronic Publication: 2024 Apr 22.Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN:

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Graphene-based field-effect transistors for biosensing: where is the field heading to?

• Authors : Szunerits S; Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, UMR 8520 - IEMN, 59000, Lille, France. .; Laboratory for Life Sciences and Technology (LiST), Faculty of Medicine and Dentistry, Danube Private University, 3500, Krems, Austria. .

Subjects: Graphite* ; Nucleic Acids* ; Biosensing Techniques*/Biosensing Techniques*/Biosensing Techniques*/methods

• Source: Analytical and bioanalytical chemistry [Anal Bioanal Chem] 2024 Apr; Vol. 416 (9), pp. 2137-2150. Date of Electronic Publication: 2023 Jun 03.Publisher: Springer-Verlag Country of Publication: Germany NLM ID: 101134327 Publication Model: Print-Electronic Cited Medium: Internet ISSN:

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