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Academic Journal

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires:Implications for SiGe-Based Nanolasers

Subjects: SiGe; atomic layer deposition; direct bandgap

  • Source: Berghuis , W-J H , van Tilburg , M A J , Peeters , W H J , van Lange , V T , Farina , R , Fadaly , E , Renirie , E , Theeuwes , R J , Verheijen , M A , Macco , B , Bakkers , E P A M , Haverkort , J E

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Academic Journal

A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor

Subjects: Corner effect; Density of states; Field effect transistor

  • Source: International Journal of Electrical and Computer Engineering (IJECE); Vol 14, No 2: April 2024; 1390-1397 ; 2722-2578 ; 2088-8708 ; 10.11591/ijece.v14i2

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