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Academic Journal

A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor

Subjects: Corner effect; Density of states; Field effect transistor

  • Source: International Journal of Electrical and Computer Engineering (IJECE); Vol 14, No 2: April 2024; 1390-1397 ; 2722-2578 ; 2088-8708 ; 10.11591/ijece.v14i2

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Academic Journal

Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors

Subjects: Access resistance; density of states (DOS); intrinsic mobility

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-03690764 ; IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3175-3180. ⟨10.1109/TED.2022.3167938⟩.

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Academic Journal

Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors

Subjects: Access resistance; density of states (DOS); intrinsic mobility

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-03690764 ; IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3175-3180. ⟨10.1109/TED.2022.3167938⟩.

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