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Conference

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyMilan; Italy

  • Source: 2nd Workshop Hexagonal SiGe and related materialshttps://hal.science/hal-045639952nd Workshop Hexagonal SiGe and related materials, Apr 2024, Milan, Italy

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Conference

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyMilan; Italy

  • Source: 2nd Workshop Hexagonal SiGe and related materialshttps://hal.science/hal-045639952nd Workshop Hexagonal SiGe and related materials, Apr 2024, Milan, Italy

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Conference

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyMilan; Italy

  • Source: 2nd Workshop Hexagonal SiGe and related materialshttps://hal.science/hal-045639952nd Workshop Hexagonal SiGe and related materials, Apr 2024, Milan, Italy

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Conference

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyMilan; Italy

  • Source: 2nd Workshop Hexagonal SiGe and related materialshttps://hal.science/hal-045639952nd Workshop Hexagonal SiGe and related materials, Apr 2024, Milan, Italy

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Conference

Telecom band light emission from confined hexagonal Ge grown on self-assisted GaAs NWs by MBE

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyMilan; Italy

  • Source: 2nd Workshop Hexagonal SiGe and related materialshttps://hal.science/hal-045639952nd Workshop Hexagonal SiGe and related materials, Apr 2024, Milan, Italy

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Academic Journal

Effect of in-plane alignment on selective area grown homo-epitaxial nanowires

Subjects: selective area growth; GaAs nanowires; molecular beam epitaxy

  • Source: Nagda , G , Beznasyuk , D , Nygard , J & Jespersen , T S 2023 , ' Effect of in-plane alignment on selective area grown homo-epitaxial nanowires ' , Nanotechnology , vol.

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Conference

Hexagonal Ge on self-assisted GaAs Nanowires for light emission

Subjects: Semiconductor Nanowires; Hexagonal Germanium; Molecular Beam EpitaxyParis; France

  • Source: Conférence GdR MatÉpi ; https://hal.science/hal-04155534 ; Conférence GdR MatÉpi, GdR MatÉpi, Jul 2023, Paris, France

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