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Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors

• Authors : Ghiasi, Talieh S.; Quereda , Jorge; van Wees, Bart J.

Subjects: monolayer Molybdenum diselenide (MoSe2); tunneling contact; bilayer hexagonal Boron Nitride (h-BN)

• Source: Ghiasi , T S , Quereda , J & van Wees , B J 2018 , ' Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors ' , 2D

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