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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier ; Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker

• Authors : Mußer, Markus

Subjects: Galliumnitrid; Breitbandverstärker; Leistungsverstärker

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Analysis of the potential of gallium nitride based monolithic power amplifiers in the microwave domain with more than an octave bandwidth ; Untersuchung des Potenzials von Galliumnitrid-basierten monolithisch integrierten Leistungsverstärkern im Mikrowellenbereich mit mehr als einer Oktave Bandbreite

• Authors : Dennler, Philippe

Subjects: Mikrowellen-Halbleiterbauelement; MMIC; Galliumnitrid

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Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers ; Galliumnitrid-basierte Transistoren für hochenergieeffiziente Schaltverstärker im Mikrowellenbereich

• Authors : Maroldt, Stephan

Subjects: Galliumnitrid; Schaltverstärker; HEMT

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A 99.74% efficient capacitor-charging converter using partial power processing for electrocalorics

• Authors : Mönch, Stefan; Reiner, Richard; Mansour, Kareem

• Source: ISSN: 2168-6785.

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Advances in GaN devices and circuits at higher mm-wave frequencies

• Authors : Neininger, Philipp; Mikulla, Michael; Döring, Philipp

• Source: ISSN: 2772-6711.

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2.6- and 4-W E-band GaN power amplifiers with a peak efficiency of 22% and 15.3%

• Authors : Cimbili, Bharath; Friesicke, Christian; Raay, Friedbert van

• Source: ISSN: 2771-9588.

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Power module design for gan transistors enabling high switching speed in multi‐kilowatt applications

• Authors : Wöhrle, Dennis; Burger, Bruno; Ambacher, Oliver

• Source: ISSN: 2194-4296.

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Broadband 100-W Ka-band SSPA based on GaN power amplifiers

• Authors : Neininger, Philipp; John, Laurenz; Zink, Martin

• Source: IEEE transactions on microwave theory and techniques. - 32, 6 (2022) , 708-711, ISSN: 1558-1764

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A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology

• Authors : Thome, Fabian; Brückner, Peter; Leone, Stefano

• Source: IEEE transactions on microwave theory and techniques. - 70, 2 (2022) , 1367-1376, ISSN: 1557-9670

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Large-scale defect clusters with hexagonal honeycomb-like arrangement in ammonothermal GaN crystals

• Authors : Kirste, Lutz; Tran Thi Caliste, Thu Nhi; Weyher, Jan L.

• Source: Materials. - 15, 19 (2022) , 6996, ISSN: 1996-1944

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