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  • 1-10 ل  111 نتائج ل ""Barrier""

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Collection : Universite Toulouse 2 - Jean Jaures
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Academic Journal

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Subjects: Free-standing GaN; Schottky barrier diode; current transport

  • Source: ISSN: 0026-2692 ; Microelectronics Journal ; https://hal.science/hal-03826217 ; Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩.

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Academic Journal

Proenkephalin deletion in hematopoietic cells induces intestinal barrier failure resulting in clinical feature similarities with irritable bowel syndrome in mice

Subjects: CD4(+) T-CELLS; OPIOID RECEPTOR; ENDOGENOUS REGULATION

  • Source: ISSN: 2399-3642 ; Communications Biology ; https://hal.inrae.fr/hal-04317210 ; Communications Biology, 2023, 6 (1), pp.1168. ⟨10.1038/s42003-023-05542-2⟩.

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Conference

New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements

Subjects: Energy barrier; gallium nitride; reliabilityPhoenix; AZ; United States

  • Source: 2015 IEEE MTT-S International Microwave SymposiumInternational Microwave Symposium (IMS 2015)https://hal.science/hal-01343966International Microwave Symposium (IMS 2015), May 2015,

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Academic Journal

Nonlinear modeling and feedback control of boom barrier automation

Subjects: Mechatronic industry motion control trajectory tracking linear matrix inequalities; Mechatronic industry; motion control

  • Source: ISSN: 1083-4435 ; IEEE/ASME Transactions on Mechatronics ; https://laas.hal.science/hal-04253614 ; IEEE/ASME Transactions on Mechatronics, 2022, 27 (6), pp.4752-4763.

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Conference

Analysis of Barrier Inhomogeneities in AlGaN/GaN HEMTs' Schottky Diodes by I-V-T measurements

Subjects: ideality factor; AlGaN/GaN HEMT; Schottky diodeNuremberg; Germany

  • Source: Proceedings of the 8th European Microwave Integrated Circuits Conference ; EuMC 2013 ; https://hal.science/hal-01343345 ; EuMC 2013, Oct 2013, Nuremberg, Germany. 4p

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Conference

Gate Defects Analysis in AlGaN/GaN Devices by Mean of Accurate Extraction of the Schottky Barrier Height, Electrical Modeling, T-CAD Simulations and TEM Imaging

Subjects: HBS effect; LFN; GaN HEMTBordeaux; France

  • Source: 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017)https://laas.hal.science/hal-0208818828th European Symposium on Reliability of Electron

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Academic Journal

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging

Subjects: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; [SPI.TRON]Engineering Sciences [physics]/Electronics; [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism

  • Source: ISSN: 0026-2714.

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Academic Journal

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

Subjects: Deposition; Interdiffusion; Oxygen barriers

  • Source: ISSN: 1862-6319.

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Academic Journal

CVD diamond Schottky barrier diode. Simulation, carrying out and edge termination techniques ; Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique

Subjects: diamant; grand gap; électronique de puissance

  • Source: ISSN: 2103-3641 ; European Journal of Electrical Engineering ; https://hal.science/hal-01627761 ; European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567.

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Academic Journal

Volumes of sublevel sets of nonnegative forms and complete monotonicity

Subjects: Nonnegative polynomials; Volume of sublevel set; Complete monotonicity

  • Source: ISSN: 2470-6566 ; SIAM Journal on Applied Algebra and Geometry ; https://laas.hal.science/hal-03693810 ; SIAM Journal on Applied Algebra and Geometry, 2023, 7 (4), ⟨10.1137/22M1502458⟩ ;

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  • 1-10 ل  111 نتائج ل ""Barrier""