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Academic Journal

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

Subjects: Ultra-wide band gap; MOCVD growth; p type β-Ga2O3

  • Source: ISSN: 2542-5293 ; Materials Today Physics ; https://hal.science/hal-02984814 ; Materials Today Physics, 2020, 15, 100263, 9 p. ⟨10.1016/j.mtphys.2020.100263⟩.

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Academic Journal

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

Subjects: AlGaN/GaN; Metallization; Harsh environments

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-03028357 ; Solid-State Electronics, 2016, 116, pp.107-110. ⟨10.1016/j.sse.2015.12.002⟩.

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  • 1-3 of  3 نتائج ل ""Band gap""