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Academic Journal

Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

Subjects: Defects; Nanostructures; Metalorganic vapor phase epitaxy

  • Source: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-02304951 ; Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩.

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  • 1-3 of  3 نتائج ل ""NANOSTRUCTURES""