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Dissertation/ Thesis

Stress measurements in microelectronic devices using Raman spectroscopy ; Mesures de contraintes par spectroscopie et imagerie Raman dans des dispositifs micro-électroniques

Subjects: contraintes mécaniques; spectroscopie Raman; imagerie Raman

  • Source: https://theses.hal.science/tel-00479985 ; Physique Atomique [physics.atom-ph]. Institut National Polytechnique de Grenoble - INPG, 2006. Français. ⟨NNT : ⟩.

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Conference

Accurate modeling of dynamic variability of SRAM cell in 28 nm FDSOI technology

Subjects: modeling; FD SOI; BTI stressUdine; Italy

  • Source: 2014 ICMTS Proceedings2014 International Conference on Microelectronic Test Structures (ICMTS)https://hal.science/hal-020641972014 International Conference on Microelectronic Test

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Dissertation/ Thesis

RF reliability in SOI-CMOS technologies : device model and application to power amplifiers ; Fiabilité RF en technologie SOI-CMOS : modélisation et application à un amplificateur de puissance

Subjects: RF/mmW reliability; Aging models; Power Amplifier

  • Source: https://theses.hal.science/tel-04680813 ; Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-.], 2024. English. ⟨NNT : 2024GRALT033⟩.

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Book

Integrated Laser Doppler Velocimeter made by Ion-Exchange in Glass Substrate

Subjects: Integrated Velocimeter; LDV; LDA

  • Source: Developments in Laser Techniques and Fluid Mechanics ; https://hal.univ-grenoble-alpes.fr/hal-02388175 ; Developments in Laser Techniques and Fluid Mechanics, Springer Berlin Heidelberg, pp.39-51,

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