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Academic Journal

The influence of tunnel effect on the current injection of spin light-emitting diodes with InGaAs/GaAs quantum wells

Subjects: tunnel-thin barrier; spin-polarized charge carriers; diffusion penetration

  • Source: Физика волновых процессов и радиотехнические системы; Vol 18, No 2 (2015); 78-82 ; Physics of Wave Processes and Radio Systems; Vol 18, No 2 (2015);

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Academic Journal

Methods used to develop the light emitting nanostructures with InGaAs/GaAs quantum wells

Subjects: сpolarization; spin injector; tunnel-thin barrier

  • Source: Физика волновых процессов и радиотехнические системы; Vol 20, No 1 (2017); 39-42 ; Physics of Wave Processes and Radio Systems; Vol 20, No 1 (2017);

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