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Fabrication and characterisation of AlGaN/GaN high electron mobolity transistors for power applications

• Authors : Bernát, Juraj; Lüth, Hans

Subjects: info:eu-repo/classification/ddc/620; Ingenieurwissenschaften; GalliumnitridDE

• Source: Aachen : Publikationsserver der RWTH Aachen University IV, 152 S. : Ill., graph. Darst. (2005). = Aachen, Techn. Hochsch., Diss., 2005

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