Source: MNE2012 (38th International Micro & Nano Engineering Conference) ; https://hal.science/hal-00977471 ; MNE2012 (38th International Micro & Nano Engineering Conference), Sep 2012, Toulouse, France.

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Dissertation/ Thesis

Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications ; Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques

Authors : Chaluvadi, Sandeep Kumar;

Subjects: Manganese oxide; Epitaxy; Strain

Source: https://theses.hal.science/tel-01717569 ; Electronics. Normandie Université, 2017. English. ⟨NNT : 2017NORMC248⟩.

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Dissertation/ Thesis

Misfit dislocation and strain relaxation at large lattice mismatched III-V semiconductor interfaces ; Dislocation et relaxation des contraintes aux interfaces entre semiconducteurs III-V à large différence de paramètres de maille

Authors : Wang, Y.;

Subjects: III-V Antimonides semiconductors; misfit dislocation; strain relaxation

Source: https://theses.hal.science/tel-00779457 ; Materials Science [cond-mat.mtrl-sci]. Université de Caen, 2012. English. ⟨NNT : ⟩.

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Academic Journal

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$

Authors : Damilano, B; Vézian, S.; Brault, J. ...

Subjects: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]

Source: ISSN: 0957-4484.

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Academic Journal

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

Authors : Ndiaye, Samba; Elias, Caroline; Diagne, Aissatou ...

Subjects: Metrology; Epitaxy; Materials analysis

Source: ISSN: 0003-6951.

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Academic Journal

Integration of epitaxial La2/3Sr1/3MnO3 thin films on silicon-on-sapphire substrate for MEMS applications

Authors : Chaluvadi, Sandeep, Kumar; Wang, Zhe; Carvalho de Araújo, Laryssa, M ...

Subjects: LSMO; manganites; pulsed laser deposition

Source: ISSN: 0169-4332.

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Academic Journal

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Authors : Damilano, B.; Vezian, Stephane; Chauvat, M.P. ...

Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Source: ISSN: 0021-8979.

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فلترة النتائج

Electronic Properties of Fully Strained La 1– x Sr x MnO 3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy

Exciton ionization induced by intersubband absorption in non-polar ZnO/ZnMgO quantum wells at room temperature

La0.7Sr0.3MnO3 suspended microbridges for uncooled bolometers made using reactive ion etching of the silicon substrates

Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications ; Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques

Misfit dislocation and strain relaxation at large lattice mismatched III-V semiconductor interfaces ; Dislocation et relaxation des contraintes aux interfaces entre semiconducteurs III-V à large différence de paramètres de maille

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

Integration of epitaxial La2/3Sr1/3MnO3 thin films on silicon-on-sapphire substrate for MEMS applications

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

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