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Academic Journal

Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics

Subjects: Schottky barrier inhomogeneities; Reverse current-voltage characteristics; Schottky diodes

  • Source: ISSN: 1369-8001 ; Materials Science in Semiconductor Processing ; https://normandie-univ.hal.science/hal-04622015 ; Materials Science in Semiconductor Processing, 2024, 176, pp.108314.

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Academic Journal

Structural and Barrier Properties of Compatibilized PE/PA6 Multinanolayer Films

Subjects: PE/PA6 multinanolayer films; barrier properties; forced assembly coextrusion process

  • Source: ISSN: 2077-0375 ; Membranes ; https://hal.science/hal-03139488 ; Membranes, 2021, 11 (2), pp.75. ⟨10.3390/membranes11020075⟩.

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