Source: 17th Conference on Power Electronics and Applications, EPE’15-ECCE Europe2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

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Academic Journal

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Authors : Zeng, Y.; Roland, Iännis; Checoury, X. ...

Subjects: [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]

Source: ISSN: 0003-6951.

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Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Authors : Wehbe, Maya; Charles, Matthew; Baril, Kilian ...

Subjects: dark-field X-ray microscopy; synchrotron radiation; characterization

Source: ISSN: 0021-8898.

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Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Authors : Roland, Iännis; Zeng, Y.; Han, Z. ...

Subjects: [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]

Source: ISSN: 0003-6951.

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Dissertation/ Thesis

Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride ; Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium

Authors : Bertrand, Dimitri;

Subjects: Gallium nitride; High-Electron-Mobility Transistor; AlGaN/GaN

Source: https://theses.hal.science/tel-01592003 ; Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2016. Français. ⟨NNT : 2016GREAI060⟩.

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Dissertation/ Thesis

Study of the trapping phenomena on the long-term reliability of Gallium Nitride high electron mobility transistors ; Etude des phénomènes de piégeage sur la fiabilité à long terme des transistors à haute mobilité électronique en Nitrure de Gallium

Authors : Bennouna, Souhaila;

Subjects: Reliability; Trapping phenomena; Gate-lag

Source: https://theses.hal.science/tel-03425224 ; Science des matériaux [cond-mat.mtrl-sci]. Normandie Université, 2021. Français. ⟨NNT : 2021NORMR051⟩.

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High-Aspect-Ratio GaN p – i – n Nanowires for Linear UV Photodetectors

Authors : da Silva, Bruno César; Biegański, Adam; Durand, Christophe ...

Subjects: Gallium Nitride nanowires; top-down fabrication; nanosphere lithography

Source: ISSN: 2574-0970 ; ACS Applied Nano Materials ; https://hal.science/hal-04165154 ; ACS Applied Nano Materials, 2023, 6 (14), pp.12784-12791. ⟨10.1021/acsanm.3c01495⟩.

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Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Authors : Maurya, Vishwajeet; Buckley, Julien; Alquier, Daniel ...

Subjects: reverse leakage; TCAD modeling; gallium nitride

Source: ISSN: 1996-1073 ; Energies ; https://hal.science/hal-04166062 ; Energies, 2023, 16 (14), pp.5447. ⟨10.3390/en16145447⟩.

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فلترة النتائج

Comparative study of collision cascades and resulting displacement damage in GaN, Si and Ge ; Etude comparative de cascades de collision leurs dégats de déplacements dans le GaN, Si et Ge

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride ; Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium

Study of the trapping phenomena on the long-term reliability of Gallium Nitride high electron mobility transistors ; Etude des phénomènes de piégeage sur la fiabilité à long terme des transistors à haute mobilité électronique en Nitrure de Gallium

High-Aspect-Ratio GaN p – i – n Nanowires for Linear UV Photodetectors

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

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