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  • 1-10 ل  43 نتائج ل ""Schottky diodes""

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Collection : Hal Lyon 1 (University Claude Bernard Lyon 1)
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Conference

Multiphysics Characterizations of Vertical GaN Schottky Diodes

Subjects: Cathodo-luminescence (CL); micro-Raman spectroscopy; Current-voltage I (V)Ann Arbor; United States

  • Source: 2022 Compound Semiconductor Week (CSW)https://hal.science/hal-038445852022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2,

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Conference

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Subjects: Trapping; quasi-static stress; hard switchingPoiana Brasov; Romania

  • Source: 2022 International Semiconductor Conference (CAS 2022)https://hal.science/hal-038878652022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198,

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Academic Journal

Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Subjects: 4H-SiC Schottky diode; electro-physical characterisation; periphery protection

  • Source: ISSN: 1012-0394.

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Academic Journal

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Subjects: diamond; Heteroepitaxy; Schottky diodes

  • Source: ISSN: 0925-9635 ; Diamond and Related Materials ; https://hal.science/hal-02500531 ; Diamond and Related Materials, 2020, 105, pp.107768. ⟨10.1016/j.diamond.2020.107768⟩.

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Conference

Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Subjects: 4H-SiC Schottky diode; electro-physical characterisation; periphery protectionSorrente; Italy

  • Source: ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials ; https://hal.science/hal-04218429 ; ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials,

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Academic Journal

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Subjects: [PHYS]Physics [physics]

  • Source: ISSN: 1862-6300.

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Conference

Electrical behavior of vertical Schottky diodes on GaN homoepitaxy

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerBerlin; Germany

  • Source: IWN 2022 - International Workshop on Nitride Semiconductors ; https://hal.science/hal-03854620 ; IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany ;

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Conference

Surge Current Capability of Ga2O3 Schottky Diodes

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerBlacksburg; VA; United States

  • Source: CPES Annual Conference ; https://hal.science/hal-02968817 ; CPES Annual Conference, Aug 2020, Blacksburg, VA, United States

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Academic Journal

Surge Current Capability of Ultra-Wide-Bandgap Ga2O3 Schottky Diodes

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric power

  • Source: ISSN: 0026-2714.

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Conference

Simulation and design of junction termination structures for diamond Schottky diodes

Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric powerBudapest; Hungary

  • Source: European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010) ; https://hal.science/hal-03656932 ; European Conference on Diamond Diamond-like Materials Carbon

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  • 1-10 ل  43 نتائج ل ""Schottky diodes""