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Collection : Dial@Usl-B (Universite Saint-Louis, Bruxelles)

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Conference

SOI technologies for RF and millimeter-wave integrated circuits

Authors : Raskin, Jean-Pierre; UCL - SST/ICTM/ELEN - PÃ´le en ingÃ©nierie Ã©lectrique

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Conference

SOI technologies for RF and millimeter-wave integrated circuits

Authors : Raskin, Jean-Pierre; UCL - SST/ICTM/ELEN - PÃ´le en ingÃ©nierie Ã©lectrique

Source: IEEE Latin America Electron Devices Conference, (2021)

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Academic Journal

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Authors : Raskin, Jean-Pierre; UCL - SST/ICTM/ELEN - PÃ´le en ingÃ©nierie Ã©lectrique

Subjects: Electrical and Electronic Engineering; Electronic; Optical and Magnetic Materials

Source: IEEE Journal of the Electron Devices Society, Vol. 10, p. 424-434 (2022)

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Conference

A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection

Authors : Lefebvre, Martin; Bol, David; 2024 IEEE Custom Integrated Circuits Conference (CICC) ...

Subjects: mixed-signal; convolution; image sensor

Source: Proceedings of the 2024 IEEE Custom Integrated Circuits Conference (CICC), p. 1-2

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Conference

SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI

Authors : Courte, Quentin; Rack, Martin; Lederer, Dimitri ...

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Conference

A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain

Authors : Rack, Martin; L. Nyssens; Q.H. Le ...

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Conference

22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 Â°C

Authors : Halder, Arka; Nyssens, Lucas; Rack, Martin ...

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Conference

28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI

Authors : Nabet, Massinissa; Rack, Martin; Nyssens, Lucas ...

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Conference

A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability

Authors : Nyssens, Lucas; Rack, Martin; Wane, S. ...

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Conference

Nox and buried PN junctions effect on RF performance of High-Resistivity Silicon substrates

Authors : Moulin, Maxime; Rack, Martin; Fache, T. ...

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فلترة النتائج

SOI technologies for RF and millimeter-wave integrated circuits

SOI technologies for RF and millimeter-wave integrated circuits

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection

SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI

A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain

22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 Â°C

28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI

A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability

Nox and buried PN junctions effect on RF performance of High-Resistivity Silicon substrates

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