Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

نتائج البحث

Display Settings
النتائج لكل صفحة: 10
Sort By: Relevance
Filter
  • 1-10 ل  102 نتائج ل ""Polycrystalline silicon""

فلترة النتائج

Collection : Archive Ouverte Hal (Hyper Article En Ligne, Ccsd - Centre Pour La Communication Scientifique Directe)
إعادة تعيين خيارات الفبترة
Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request
Academic Journal

Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors

Subjects: Access resistance; density of states (DOS); intrinsic mobility

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-03690764 ; IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3175-3180. ⟨10.1109/TED.2022.3167938⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors

Subjects: Density of states; Grain boundary barrier; Polycrystalline silicon

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-03195846 ; Solid-State Electronics, Elsevier, 2021, 178, pp.107981. ⟨10.1016/j.sse.2021.107981⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

Subjects: Density of states; Low temperature polycrystalline silicon; Conduction modeling

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-02891811 ; Solid-State Electronics, Elsevier, 2020, 171, pp.107798. ⟨10.1016/j.sse.2020.107798⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide

Subjects: Silicon carbide (SiC) Crystallographic orientation EBSD Twin boundary Twin plane reentrant edge; Silicon carbide (SiC); Crystallographic orientation

  • Source: ISSN: 1359-6454 ; Acta Materialia ; https://hal.science/hal-04272514 ; Acta Materialia, 2023, 259, pp.119274. ⟨10.1016/j.actamat.2023.119274⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode

Subjects: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

  • Source: ISSN: 0361-5235.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

Subjects: CMOS technology; Gate-all-around; Mosfet

  • Source: ISSN: 0167-9317.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Subjects: Doping; Crystallinity; Polycrystalline silicon

  • Source: ISSN: 0169-4332 ; Applied Surface Science ; https://hal.archives-ouvertes.fr/hal-01086621 ; Applied Surface Science, Elsevier, 2014, 314, pp.358-366. ⟨10.1016/j.apsusc.2014.07.012⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

Subjects: Polycrystalline silicon; 3D structure; Thin film transistor (TFT)

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-00906019 ; Solid-State Electronics, Elsevier, 2013, 86, pp.1-5. ⟨10.1016/j.sse.2013.04.021⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection

Subjects: Aryl-diazonium salts; Chemical sensors; Functionalization

  • Source: ISSN: 0925-4005.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Variable range hopping conduction in N- and P-type in-situ doped polycrystalline silicon nanowires

Subjects: variable range hopping; N-type and P-type polycristalline silicon nanowires; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

  • Source: ISSN: 0268-1242.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
  • 1-10 ل  102 نتائج ل ""Polycrystalline silicon""