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Conference

Evidence of Trapping and Electrothermal Effects in Vertical Junctionless Nanowire Transistors

Subjects: vertical junctionless nanowire transistors; electrothermal effects; trappingTarragona; Spain

  • Source: 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023https://hal.science/hal-042316059th Joint International EuroSOI

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Conference

Shaping non-reciprocal spin wave beams using gold nanowire grating

Subjects: non-reciprocal; spin wave beams; gold nanowireSpainMadrid, Spain

  • Source: JEMS 2023: 13th Joint European Magnetic Symposia ; https://hal.science/hal-04203294 ; JEMS 2023: 13th Joint European Magnetic Symposia, Aug 2023, Madrid, Spain. ; https://www.jems2023.es/

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Academic Journal

Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation

Subjects: Junctionless nanowire transistors; nanoscale thermal transport; Guyer-Krumhansl equation (GKE)

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04296531 ; IEEE Transactions on Electron Devices, 2023, 70 (12), pp.6505 - 6511.

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Academic Journal

Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation

Subjects: Nanowire FET; 3D TCAD; Process simulation

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://laas.hal.science/hal-04234531 ; Solid-State Electronics, 2023, 200, pp.108551. ⟨10.1016/j.sse.2022.108551⟩ ;

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Academic Journal

Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods

Subjects: Junctionless nanowire transistors; electrothermal effects; thermal resistance

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04296517 ; IEEE Transactions on Electron Devices, 2023, pp.1-7. ⟨10.1109/TED.2023.3321277⟩.

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Academic Journal

3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs

Subjects: Verilog-A; 3D electronics; vertical nanowire transistor

  • Source: ISSN: 2329-9231 ; IEEE Journal on Exploratory Solid-State Computational Devices and Circuits ; https://hal.science/hal-04230911 ; IEEE Journal on Exploratory Solid-State Computational Devices and

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