Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

نتائج البحث

Display Settings
النتائج لكل صفحة: 10
Sort By: Relevance
Filter
  • 1-10 ل  13 نتائج ل ""Polycrystalline silicon""

فلترة النتائج

Collection : Archive Ouverte Hal (Hyper Article En Ligne, Ccsd - Centre Pour La Communication Scientifique Directe) Publisher : elsevier
إعادة تعيين خيارات الفبترة
Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request
Academic Journal

In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors

Subjects: Density of states; Grain boundary barrier; Polycrystalline silicon

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-03195846 ; Solid-State Electronics, Elsevier, 2021, 178, pp.107981.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

Subjects: Density of states; Low temperature polycrystalline silicon; Conduction modeling

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-02891811 ; Solid-State Electronics, Elsevier, 2020, 171, pp.107798.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide

Subjects: Silicon carbide (SiC) Crystallographic orientation EBSD Twin boundary Twin plane reentrant edge; Silicon carbide (SiC); Crystallographic orientation

  • Source: ISSN: 1359-6454 ; Acta Materialia ; https://hal.science/hal-04272514 ; Acta Materialia, 2023, 259, pp.119274. ⟨10.1016/j.actamat.2023.119274⟩.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

Subjects: CMOS technology; Gate-all-around; Mosfet

  • Source: ISSN: 0167-9317.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Subjects: Doping; Crystallinity; Polycrystalline silicon

  • Source: ISSN: 0169-4332 ; Applied Surface Science ; https://hal.archives-ouvertes.fr/hal-01086621 ; Applied Surface Science, Elsevier, 2014, 314, pp.358-366.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

Subjects: Polycrystalline silicon; 3D structure; Thin film transistor (TFT)

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.archives-ouvertes.fr/hal-00906019 ; Solid-State Electronics, Elsevier, 2013, 86, pp.1-5.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection

Subjects: Aryl-diazonium salts; Chemical sensors; Functionalization

  • Source: ISSN: 0925-4005.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor

Subjects: Polycrystalline silicon nanowire FET (poly-Si NW FET); Bio-sensor; DNA hybridization

  • Source: ISSN: 0956-5663 ; Biosensors and Bioelectronics ; https://hal.archives-ouvertes.fr/hal-00787263 ; Biosensors and Bioelectronics, Elsevier, 2013, 40 (1), pp.141-146.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

A miniature silicon hot wire sensor for automatic wind speed measurements

Subjects: [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph]; [SPI.MECA.MEFL]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Fluids mechanics [physics.class-ph]

  • Source: ISSN: 0960-1481.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
Academic Journal

Polysilicon nanowires FET as highly-sensitive pH-sensor: modeling and measurements

Subjects: pH; Low-cost silicon nanowires devices; CMOS compatible

  • Source: ISSN: 1877-7058.

تفاصيل العنوان

اقرأ أكثر حفظ في قائمتي
×
  • 1-10 ل  13 نتائج ل ""Polycrystalline silicon""