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  • 1-10 ل  48 نتائج ل ""Strained""

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Collection : Aix-Marseille Universite
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Academic Journal

Electronic and Transport Properties of Strained and Unstrained Ge2Sb2Te5: A DFT Investigation

Subjects: layered chalcogenides; thermoelectrics; strains

  • Source: ISSN: 1996-1944 ; Materials ; https://amu.hal.science/hal-04526851 ; Materials, 2023, 16, pp.5015. ⟨10.3390/ma16145015⟩.

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Academic Journal

New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET

Subjects: strainedsilicon; epitaxy; relaxation

  • Source: ISSN: 1944-8244.

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Academic Journal

Direct band gap In x Ga 1Àx As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector

Subjects: Band engineering; Absorption; Strained Ge/InxGa1−xAs

  • Source: ISSN: 0925-3467.

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Academic Journal

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Subjects: Strained SiGe/Si Quantum Wells; Band Structure; Device Engineering

  • Source: ISSN: 2164-5345.

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Academic Journal

New strategies for producing defect free SiGe strained nanolayers

Subjects: Condensed-matter physics; Synthesis and processing; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

  • Source: ISSN: 2045-2322.

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Academic Journal

A DFT study of the electronic, optical and topological properties of free and biaxially strained CuIn 1−x Al x Se 2

Subjects: DFT; CuIn1-xAlxSe2; Optical properties

  • Source: ISSN: 2050-7526.

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Conference

Minibands modeling in strained balanced InGaAs/GaAs/GaAsP cells

Subjects: minibands; carrier collection; quantum modelingSan Francisco; CA; United States

  • Source: SPIE Proceedings ; Optoelectronics and Photonic Materials and Devices Conference (SPIE OPTO) ; https://hal.science/hal-01694470 ; Optoelectronics and Photonic Materials and Devices Conference (SPIE

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Academic Journal

Plasticity in inhomogeneously strained Au nanowires studied by Laue microdiffraction

Subjects: dislocations; x-ray diffraction (XRD); nanostructure

  • Source: EISSN: 2059-8521 ; MRS Advances ; https://hal.science/hal-01820977 ; MRS Advances, 2018, 3 (39), pp.2331-2339. ⟨10.1557/adv.2018.465⟩

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Academic Journal

Nucleation-vs-instability race in strained lms

Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

  • Source: ISSN: 2475-9953 ; Physical Review Materials ; https://hal.science/hal-01788623 ; Physical Review Materials, 2017.

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Academic Journal

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling

Subjects: infrared photodetectors; detectivity; band structure engineering

  • Source: ISSN: 0268-1242.

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  • 1-10 ل  48 نتائج ل ""Strained""