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Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate

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  • معلومة اضافية
    • Contributors:
      Lund University, Faculty of Science, Department of Physics, Solid State Physics, Lunds universitet, Naturvetenskapliga fakulteten, Fysiska institutionen, Fasta tillståndets fysik, Originator; Lund University, Faculty of Engineering, LTH, LTH Profile areas, LTH Profile Area: Nanoscience and Semiconductor Technology, Lunds universitet, Lunds Tekniska Högskola, LTH profilområden, LTH profilområde: Nanovetenskap och halvledarteknologi, Originator; Lund University, Profile areas and other strong research environments, Strategic research areas (SRA), NanoLund: Centre for Nanoscience, Lunds universitet, Profilområden och andra starka forskningsmiljöer, Strategiska forskningsområden (SFO), NanoLund: Centre for Nanoscience, Originator; Lund University, Profile areas and other strong research environments, Lund University Profile areas, LU Profile Area: Light and Materials, Lunds universitet, Profilområden och andra starka forskningsmiljöer, Lunds universitets profilområden, LU profilområde: Ljus och material, Originator
    • نبذة مختصرة :
      The anisotropic permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate, Lu2SiO5 (LSO), have been determined in the terahertz spectral range. Using terahertz generalized spectroscopic ellipsometry (THz-GSE), we obtained the THz permittivities along the a, b, and c ⋆ crystal directions, which correspond to the ϵ a , ϵ b , and ϵ c ⋆ on-diagonal tensor elements. The associated off diagonal tensor element ϵ a c ⋆ was also determined experimentally, which is required to describe LSO's optical response in the monoclinic a-c crystallographic plane. From the four tensor elements obtained in the model fit, we calculate the direction of the principal dielectric axes in the a-c plane. We find good agreement when comparing THz-GSE permittivities to the static permittivity tensors from previous infrared and density functional theory studies.