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Illumination source and associated metrology apparatus

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  • Publication Date:
    July 23, 2024
  • معلومة اضافية
    • Patent Number:
      12044,951
    • Appl. No:
      17/769725
    • Application Filed:
      October 07, 2020
    • نبذة مختصرة :
      Disclosed is an illumination source comprising a gas delivery system comprising a gas nozzle. The gas nozzle comprises an opening in an exit plane of the gas nozzle. The gas delivery system is configured to provide a gas flow from the opening for generating an emitted radiation at an interaction region. The illumination source is configured to receive a pump radiation having a propagation direction and to provide the pump radiation in the gas flow. A geometry shape of the gas nozzle is adapted to shape a profile of the gas flow such that gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.
    • Inventors:
      ASML Netherlands B.V. (Veldhoven, NL)
    • Assignees:
      ASML Netherlands B.V. (Veldhoven, NL)
    • Claim:
      1. An illumination source comprising: a gas delivery system comprising a gas nozzle, and wherein the gas nozzle comprises an opening in an exit plane of the gas nozzle, wherein the gas delivery system is configured to provide a gas flow from the opening operable to generate an emitted radiation at an interaction region, and a gas shaping element disposed entirely between the exit plane and a pump radiation having a propagation direction and configured to alter a profile of the gas flow, wherein the illumination source is configured to receive the pump radiation and to provide the pump radiation in the gas flow.
    • Claim:
      2. The illumination source of claim 1 , wherein a geometrical shape of the gas nozzle is adapted to shape the profile of the gas flow, such that a gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.
    • Claim:
      3. The illumination source of claim 2 , wherein: the profile of the gas flow is to suppress an energy divergence of the pump radiation inside the gas flow, and the energy divergence is caused by a portion of the gas flow being ionized by the pump radiation.
    • Claim:
      4. The illumination source of claim 2 , wherein the maximum value is above a phase-matching pressure.
    • Claim:
      5. The illumination source of claim 2 , wherein a cut-off region length of the profile of the gas flow in the propagation direction of the pump radiation is less than 100 μm.
    • Claim:
      6. The illumination source of claim 1 , wherein: a width of the opening gradually increases along the propagation direction of the pump radiation, and a shape of the opening is a trapezoid or an isosceles trapezoid.
    • Claim:
      7. The illumination source of claim 1 , wherein an interior cross-sectional area of the gas nozzle in a plane parallel to the exit plane increases along a direction of the gas flow for at least a portion of the gas nozzle.
    • Claim:
      8. The illumination source of claim 1 , wherein a shape of the opening in the exit plane is asymmetric to planes perpendicular to the propagation direction of the pump radiation.
    • Claim:
      9. The illumination source of claim 1 , wherein the gas shaping element is configured to alter the profile of the gas flow during generation of the emitted radiation.
    • Claim:
      10. The illumination source of claim 1 , wherein the gas shaping element is disposed at least partly in the gas flow.
    • Claim:
      11. The illumination source of claim 1 , wherein the gas flow is provided by the gas delivery system into an evacuated or nearly evacuated space.
    • Claim:
      12. The illumination source of claim 1 , wherein: the emitted radiation has a wavelength in X-ray or EUV range, and the wavelength is in a range from 0.01 nm to 100 nm, from 0.1 nm to 100 nm, from 1 nm to 100 nm, from 1 nm to 50 nm, or from 10 nm to 20 nm.
    • Claim:
      13. The illumination source of claim 1 , wherein the illumination source comprises a temperature controlling assembly.
    • Claim:
      14. A metrology apparatus or a lithographic cell comprising: an illumination source comprising: a gas delivery system comprising a gas nozzle, and wherein the gas nozzle comprises an opening in an exit plane of the gas nozzle, and wherein the gas delivery system is configured to provide a gas flow from the opening for generating an emitted radiation at an interaction region, and a gas shaping element disposed entirely between the exit plane and a pump radiation havving a propagation direction and configured to alter a profile of the gas flow, wherein the illumination source is configured to receive the pump radiation and to provide the pump radiation in the gas flow.
    • Claim:
      15. The metrology apparatus or the lithographic cell of claim 14 , wherein a shape of the opening in the exit plane is asymmetric to planes perpendicular to the propagation direction of the pump radiation.
    • Claim:
      16. A method comprising: providing a gas flow from an opening in an exit plane of a gas nozzle for receiving a pump radiation having a propagation direction and for generating an emitted radiation at an interaction region; and using a gas shaping element of the gas nozzle disposed entirely between the exit plane and the pump radiation to shape a profile of the gas flow, such that a gas density of the gas flow first increases to a maximum value and subsequently falls sharply in a cut-off region along the propagation direction.
    • Patent References Cited:
      6952253 October 2005 Lof et al.
      7701577 April 2010 Straaijer et al.
      7791724 September 2010 Den Boef et al.
      8115926 February 2012 Straaijer
      8553227 October 2013 Jordanoska
      8681312 March 2014 Straaijer
      8692994 April 2014 Straaijer
      8792096 July 2014 Straaijer
      8797554 August 2014 Straaijer
      8823922 September 2014 Den Boef
      10530111 January 2020 Srivastava et al.
      20050100071 May 2005 Taylor et al.
      20060066855 March 2006 Boef et al.
      20070224518 September 2007 Yokhin et al.
      20100328655 December 2010 Den Boef
      20110026032 February 2011 Den Boef et al.
      20110102753 May 2011 Van De Kerkhof et al.
      20110249244 October 2011 Leewis et al.
      20120044470 February 2012 Smilde et al.
      20130162996 June 2013 Straaijer et al.
      20130304424 November 2013 Bakeman et al.
      20140019097 January 2014 Bakeman et al.
      20160161863 June 2016 Den Boef et al.
      20160282282 September 2016 Quintanilha et al.
      20160370717 December 2016 Den Boef et al.
      20170184981 June 2017 Quintanilha et al.
      20180267411 September 2018 Srivastava
      101515105 July 2010
      1 628 164 February 2006
      2005285675 October 2005
      2010134982 December 2010
      2019-01304 January 2019
      WO 2011/012624 February 2011
      WO 2018/166741 September 2018









    • Other References:
      Machine translation of JP-2005285675-A (Year: 2005). cited by examiner
      Machine translation of KR-2010134982-A (Year: 2010). cited by examiner
      Wachulak et al., Characterization of gas puff targets for laser matter interaction experiments, using extreme ultraviolet and soft Xray radiography and tomography techniques, Laser Plasma Targetry Workshop, Paris, Apr. 20-22, 2015 (Year: 2015). cited by examiner
      International Search Report and Written Opinion of the International Searching Authority directed to related International Patent Application No. PCT/EP2020/078122, mailed Dec. 23, 2020; 9 pages. cited by applicant
      Goh et al., “Single-shot fluctuations in waveguided high-harmonic generation,” Optics Express, vol. 23, No. 19, Sep. 14, 2015; pp. 24888-24902. cited by applicant
      Landgraf et al., “High resolution 3D gas-jet characterization,” Review of Scientific Instruments, vol. 82, No. 8, Aug. 17, 2011; pp. 1-6. cited by applicant
      Kim et al., “Characterizations of symmetry and asymmetry high-density gas jets without Abel inversion,” Review of Scientific Instruments, vol. 75, No. 9, Sep. 2, 2004; pp. 2865-2868. cited by applicant
      Heyl et al., “A nozzle for high-density supersonic gas jets at elevated temperatures,” Review of Scientific Instruments, vol. 89, No. 113114, Nov. 19, 2018; pp. 1-5. cited by applicant
      International Preliminary Report on Patentability directed to related International Patent Application No. PCT/EP2020/078122, issued Apr. 19, 2022; 6 pages. cited by applicant
      Lemaillet et al., “Intercomparison between optical and x-ray scatterometry measurements of FinFET structures,” Proc. of SPIE, Metrology, Inspection, and Process Control for Microlithography XXVII, vol. 8681, Apr. 10, 2013; 8 pages. cited by applicant
    • Primary Examiner:
      Gordon, Steven Whitesell
    • Attorney, Agent or Firm:
      Sterne, Kessler, Goldstein & Fox P.L.L.C.
    • الرقم المعرف:
      edspgr.12044951