Metrology method for measuring an exposed pattern and associated metrology apparatus

12031,909

18/021885

July 20, 2021

Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

ASML Netherlands B.V. (Veldhoven, NL)

ASML Netherlands B.V. (Veldhoven, NL)

1. A method of performing a measurement of an exposed pattern in photoresist on a substrate, the method comprising: imparting a beam of measurement radiation on the exposed pattern over a measurement area of a size equal to or bigger than 100 μm 2 for preventing or mitigating photoresist damage from the measurement radiation, the beam of measurement radiation forming a measurement spot on the substrate; capturing scattered radiation comprising the measurement radiation subsequent to it having been scattered from said exposed pattern; detecting the scattered radiation on at least one detector; and determining a value of a parameter of interest from the scattered radiation.

2. The method of claim 1 , wherein the total size of the measurement area from which a single value of the parameter of interest is determined, is no smaller than 200 μm 2 , 500 μm 2 , 1000 μm 2 , 2500 μm 2 , 0.025 mm 2 , 0.1 mm 2 , or 0.25 mm 2 .

3. The method of claim 1 , wherein the measurement area is such that a maximum dose received by the measurement area is 0.01 J/cm 2 , 1 mJ/cm 2 , or 0.1 mJ/cm 2 .

4. The method of claim 1 , wherein the measurement spot comprises an elongated measurement spot larger in a first dimension than in a second dimension perpendicular to said first dimension, and wherein, the second dimension corresponds to a direction on said at least one detector along which different wavelengths of the scattered radiation are spatially separated.

5. The method of claim 1 , wherein the beam of measurement radiation is focused on the at least one detector instead of said substrate.

6. The method of claim 1 , wherein the measurement spot formed by said beam of measurement radiation at said substrate comprises an area that is equal to and defines said measurement area.

7. The method of claim 1 , wherein the measurement spot formed by the beam of measurement radiation at the substrate is smaller than said measurement area and moved over said measurement area during the imparting and capturing steps, wherein the moving of the beam of measurement radiation over the measurement area is actuated by actuation of one or both of the beam of measurement radiation and substrate, wherein the movement over said measurement area comprises one or more scans over the measurement area, wherein the one or more scans comprises one or more linear scans, and wherein the one or more scans comprises a plurality of linear scans joined to form a meander path over the measurement area.

8. The method of claim 7 , wherein the determining the value for the parameter of interest comprises determining an average of all measurement values obtained over the measurement area.

9. The method of claim 7 , further comprising: capturing time-resolved measurement data while moving said beam of measurement radiation over the measurement area; and forming an image from the time-resolved measurement data.

10. The method of claim 1 , wherein imparting the beam of measurement radiation comprises imparting a broadband beam generated by high harmonic generation using a drive laser beam.

11. The method of claim 1 , wherein a position of the scattered radiation on the at least one detector does not move during said moving of the measurement spot over said measurement area.

12. The method of claim 1 , wherein imparting the beam of measurement radiation comprises imparting the beam of measurement radiation with wavelengths of 100 nm or smaller, or 20 nm or smaller.

13. A metrology device for performing a measurement of an exposed pattern in photoresist on a substrate, the metrology device comprising: an illumination system operable to impart a beam of measurement radiation on the exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation, and such that the beam of measurement radiation forms a measurement spot on the substrate; at least one detector operable to detect scattered radiation comprising the measurement radiation subsequent to it having been scattered from the exposed pattern; and a processor operable to determine a value for a parameter of interest from the scattered radiation.

14. A computer program comprising program instructions operable to perform the method of claim 1 , when run on one or more processors.

15. The method of claim 1 , wherein different wavelengths of the scattered radiation are at least partially spectrally resolved on the at least one detector.

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