Bi-layer thin film exhibiting pseudo elasticity and shape memory effect

11220,738

16/199158

November 24, 2018

A method for fabricating a bi-layer thin film is provided. A first alloy is deposited onto a substrate using a first alloy target to form a first layer of the bi-layer thin film. The first layer may comprise greater than 50 atomic % titanium (Ti) and/or less than 50 atomic % nickel (Ni). The first alloy may be deposited onto the substrate at a first temperature (e.g., room temperature). The substrate may be made of a polymer material, such as poly (4,4′-oxydiphenylene-pyromellitimide) (e.g., Kapton™). A second alloy is deposited onto the first layer using a second alloy target to form a second layer of the bi-layer thin film. The second layer may comprise greater 50 atomic % nickel and/or less than 50 atomic % titanium. The second alloy may be deposited onto the first layer at a second temperature (e.g., room temperature). The bi-layer thin film may exhibit pseudo elasticity and shape memory effect (SME).

Mohri, Maryam (Tehran, IR); Nili Ahmadabadi, Mahmoud (Tehran, IR)

1. A method for fabricating a bi-layer thin film, comprising: performing vacuum arc re-melting (VAR) using a third alloy to produce a first alloy target; performing a first sputtering process to deposit a first alloy onto a substrate using the first alloy target to form a first layer of the bi-layer thin film, wherein: the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first base pressure, wherein the first base pressure is less than 10 −7 millibars; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first argon pressure, wherein the first argon pressure is about 3×10 −3 millibars; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first target-substrate distance, wherein the first target-substrate distance is about 50 millimeters; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first power, wherein the first power is about 200 watts; the first layer comprises titanium (Ti) present at a first atomic % within a range of 50.95 to 51.05 atomic %; the first alloy target comprises titanium present at an atomic % greater than the first atomic %; the first layer comprises nickel (Ni) present at 48.95 to 49.05 atomic %; the first layer has a thickness of about 1 micrometer; the substrate is made of poly (4,4′-oxydiphenylene-pyromellitimide); the substrate has a thickness of about 25 micrometers; the depositing the first alloy onto the substrate is performed at a first temperature; and the first temperature is between 20° C. and 25° C.; performing VAR using a fourth alloy to produce a second alloy target; performing a second sputtering process to deposit a second alloy onto the first layer using the second alloy target to form a second layer of the bi-layer thin film, wherein: the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second base pressure, wherein the second base pressure is less than 10 −7 millibars; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second argon pressure, wherein the second argon pressure is about 3×10 −3 millibars; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second target-substrate distance, wherein the second target-substrate distance is about 50 millimeters; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second power, wherein the second power is about 200 watts; the second layer comprises titanium present at a second atomic % within a range of 49.15 to 49.25 atomic %; the second alloy target comprises titanium present at an atomic % greater than the second atomic %; the second layer comprises nickel present at 50.75 to 50.85 atomic %; the second layer has a thickness of about 1 micrometer; the depositing the second alloy onto the first layer is performed at a second temperature; and the second temperature is between 20° C. and 25° C.; responsive to performing the second sputtering process to deposit the second alloy onto the first layer: annealing the bi-layer thin film in a chamber at a heating rate of about 10° C./minute and at a base pressure of less than 10 −7 millibars; and generating, using a turbo molecular vacuum pump, a vacuum in the chamber within which the bi-layer thin film is annealed, wherein the bi-layer thin film comprises the substrate, the first layer and the second layer; responsive to at least one of a temperature of the bi-layer thin film reaching a third temperature or a temperature of an atmosphere surrounding the bi-layer thin film reaching the third temperature, maintaining the third temperature for a specified duration of time, wherein the third temperature is between 465° C. and 500° C. and the specified duration of time is between 30 to 60 minutes; and responsive to completion of the specified duration of time, lowering at least one of the temperature of the bi-layer thin film or the temperature of the atmosphere surrounding the bi-layer thin film at a cooling rate until at least one of the temperature of the bi-layer thin film or the temperature of the atmosphere surrounding the bi-layer thin film are between 20° C. and 25° C.

2. The method of claim 1 , wherein: the first sputtering process is a first direct current (DC) magnetron sputtering process; and the second sputtering process is a second DC magnetron sputtering process.

3. The method of claim 2 , comprising: during the performing the first sputtering process to deposit the first alloy onto the substrate using the first alloy target, rotating an object upon which the substrate is mounted such that a first uniform distribution of composition associated with the first layer is achieved; and during the performing the second sputtering process to deposit the second alloy onto the first layer using the second alloy target, rotating the object such that a second uniform distribution of composition associated with the second layer is achieved.

4. The method of claim 3 , wherein the bi-layer thin film exhibits: pseudo elasticity; and shape memory effect (SME).

5. The method of claim 4 , wherein: the cooling rate is about 10° C./minute.

6. A method for fabricating a bi-layer thin film, comprising: performing vacuum arc re-melting (VAR) using a third alloy to produce a first alloy target; performing a first sputtering process to deposit a first alloy onto a substrate using the first alloy target to form a first layer of the bi-layer thin film, wherein: the first layer comprises nickel (Ni) present at 50.75 to 50.85 atomic %; the first layer comprises titanium (Ti) present at a first atomic % within a range of 49.15 to 49.25 atomic %; the first alloy target comprises titanium present at an atomic % greater than the first atomic %; the first layer has a thickness of about 1 micrometer; the substrate is made of a polymer material; the substrate has a thickness of about 25 micrometers; the depositing the first alloy onto the substrate is performed at a first temperature; and the first temperature is between 20° C. and 25° C.; performing VAR using a fourth alloy to produce a second alloy target; performing a second sputtering process to deposit a second alloy onto the first layer using the second alloy target to form a second layer of the bi-layer thin film, wherein: the second layer comprises titanium present at a second atomic % within a range of 50.95 to 51.05 atomic %; the second alloy target comprises titanium present at an atomic % greater than the second atomic %; the second layer comprises nickel present at 48.95 to 49.05 atomic %; the second layer has a thickness of about 1 micrometer; the depositing the second alloy onto the first layer is performed at a second temperature; and the second temperature is between 20° C. and 25° C.; responsive to performing the second sputtering process to deposit the second alloy onto the first layer: annealing the bi-layer thin film in a chamber at a heating rate of about 10° C./minute and at a base pressure of less than 10 −7 millibars; and generating, using a turbo molecular vacuum pump, a vacuum in the chamber within which the bi-layer thin film is annealed, wherein the bi-layer thin film comprises the substrate, the first layer and the second layer; responsive to at least one of a temperature of the bi-layer thin film reaching a third temperature or a temperature of an atmosphere surrounding the bi-layer thin film reaching the third temperature, maintaining the third temperature for a specified duration of time, wherein the third temperature is between 465° C. and 500° C. and the specified duration of time is between 30 to 60 minutes; and responsive to completion of the specified duration of time, lowering at least one of the temperature of the bi-layer thin film or the temperature of the atmosphere surrounding the bi-layer thin film at a cooling rate of about 10° C./minute until at least one of the temperature of the bi-layer thin film or the temperature of the atmosphere surrounding the bi-layer thin film are between 20° C. and 25° C.

7. The method of claim 6 , wherein: the first sputtering process is a first direct current (DC) magnetron sputtering process; and the second sputtering process is a second DC magnetron sputtering process.

8. The method of claim 7 , wherein: the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first base pressure, wherein the first base pressure is less than 10 −7 millibars; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first argon pressure, wherein the first argon pressure is about 3×10 −3 millibars; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first target-substrate distance, wherein the first target-substrate distance is about 50 millimeters; the performing the first sputtering process to deposit the first alloy onto the substrate is performed using a first power, wherein the first power is about 200 watts; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second base pressure, wherein the second base pressure is less than 10 −7 millibars; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second argon pressure, wherein the second argon pressure is about 3×10 −3 millibars; the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second target-substrate distance, wherein the second target-substrate distance is about 50 millimeters; and the performing the second sputtering process to deposit the second alloy onto the first layer is performed using a second power, wherein the second power is about 200 watts.

9. The method of claim 8 , wherein the polymer material of the substrate is poly (4,4′-oxydiphenylene-pyromellitimide).

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