PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD

20240331986

18/616526

March 26, 2024

A plasma etching apparatus includes: a chamber, a support body provided inside the chamber to hold a substrate, a plasma generator provided with a plasma source to generate plasma, and a controller. The support body has a placement surface on which the substrate is placed, rotates the substrate about a perpendicular line passing through a center of the substrate, and is configured such that the placement surface is tilted with respect to a horizontal plane and the perpendicular line passes through a center of the plasma source only when the placement surface is not tilted with respect to the horizontal plane. The controller performs control so that during plasma etching, the placement surface is tilted with respect to the horizontal plane and the substrate is rotated about the perpendicular line, and control so that a total number of rotations of the substrate about the perpendicular line becomes a predetermined value.

1. A plasma etching apparatus, comprising: a chamber; a support body provided inside the chamber and configured to hold a substrate; a plasma generator including a plasma source and configured to generate plasma inside the chamber; and a controller, wherein the support body has a placement surface on which the substrate is placed, and is configured to rotate the substrate about a perpendicular line passing through a center of an upper surface of the substrate placed on the placement surface, and the support body is configured such that the placement surface is tilted with respect to a horizontal plane, the perpendicular line passes through a center of the plasma source only when the placement surface is not tilted with respect to the horizontal plane, and wherein the controller performs a first control so that during a plasma etching, the placement surface is tilted with respect to the horizontal plane and the substrate placed on the placement surface is rotated about the perpendicular line, and a second control so that a total number of the rotations of the substrate placed on the placement surface about the perpendicular line during the plasma etching becomes a predetermined value.

2. The plasma etching apparatus of claim 1, wherein the predetermined value is a natural number.

3. The plasma etching apparatus of claim 2, wherein the controller performs a third control so that the substrate placed on the placement surface is rotated at a rotational speed determined in a predetermined range based on a time required for the plasma etching so that the total number of the rotations becomes the predetermined value.

4. The plasma etching apparatus of claim 1, wherein the controller performs a third control so that the substrate placed on the placement surface is rotated at a rotational speed determined in a predetermined range based on a time required for the plasma etching so that the total number of the rotations becomes the predetermined value.

5. A plasma etching method of etching a substrate by plasma using a plasma etching apparatus, wherein the plasma etching apparatus includes: a chamber; a support body provided inside the chamber and configured to hold the substrate; and a plasma generator including a plasma source and configured to generate the plasma inside the chamber, wherein the support body has a placement surface on which the substrate is placed, and is configured to rotate the substrate about a perpendicular line passing through a center of an upper surface of the substrate placed on the placement surface, and the support body is configured such that the placement surface is tilted with respect to a horizontal plane, the perpendicular line passes through a center of the plasma source only when the placement surface is not tilted with respect to the horizontal plane, the plasma etching method comprises: performing a plasma etching while rotating the substrate placed on the placement surface about the perpendicular line in a state in which the placement surface is tilted with respect to the horizontal plane; and rotating the substrate placed on the placement surface so that a total number of the rotating the substrate placed on the placement surface about the perpendicular line during the plasma etching becomes a predetermined value.

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edspap.20240331986