OPTICAL MODULATOR WITH REGION EPITAXIALLY RE-GROWN OVER POLYCRYSTALLINE SILICON

20230251510

18/298964

April 11, 2023

Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

1. An optical modulator, comprising: a first silicon region; a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline silicon region; and a second silicon region grown on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region.

2. The optical modulator of claim 1, further comprising: a silicon oxide insulator encapsulating the first silicon region, the polycrystalline silicon region, and the second silicon region, wherein the silicon oxide insulator isolates the first silicon region from the polycrystalline silicon region.

3. The optical modulator of claim 2, further comprising: at least one first contact in electrical contact with the first silicon region through the silicon oxide insulator; and at least one second contact in electrical contact with the second silicon region through the silicon oxide insulator.

4. The optical modulator of claim 1, wherein the first silicon region is doped with a first dopant to exhibit a first conductivity type, and the polycrystalline silicon region and the second silicon region are doped with a second dopant that is different from the first dopant to exhibit a second conductivity type.

5. The optical modulator of claim 1, wherein the polycrystalline silicon region has a thickness in a range between 0 nanometers and 60 nanometers.

6. The optical modulator of claim 1, wherein the gate oxide region includes at least one layer comprised of at least one of: Silicon Dioxide; Silicon Oxy-Nitride; a Hafnium-based high-k dielectric film; a Zirconium based high-k dielectric film; and Aluminum Oxide high-k dielectric film.

02; 02; 01

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