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A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET

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اقرأ أكثر حفظ في قائمتي
  • المؤلفون: Sun, Jiahui; Shu, Ji; Chen, Jing
  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    http://repository.hkust.edu.hk/ir/Record/1783.1-137103
    https://doi.org/10.1109/LED.2024.3390132
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=45&rft.issue=6&rft.date=2024&rft.spage=1056&rft.aulast=Sun&rft.aufirst=Jiahui&rft.atitle=A+High-Voltage%2FHigh-Speed+Human-Body-Model+ESD+Simulator+Using+SiC+MOSFET&rft.title=IEEE+ELECTRON+DEVICE+LETTERS
    http://www.scopus.com/record/display.url?eid=2-s2.0-85190748868&origin=inward
    http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=001230989200022
  • معلومة اضافية
    • Publisher Information:
      IEEE 2024
    • نبذة مختصرة :
      A human-body-model (HBM) electrostatic discharge (ESD) simulator using a SiC MOSFET as the main switch is realized, verified and applied. Compared with the electromechanical relay used in the conventional simulator, the SiC MOSFET presents no restriction from the mechanical contact, smaller size and lower cost. The SiC MOSFET enables a 3.3-ns rise time of the ESD current and a 2-kV ESD voltage, leading to a high-speed and high-voltage HBM ESD simulator. The proposed ESD simulator is verified by the current waveform specified in the JEDEC standard and by comparing the measured results with those from a standard simulator. Using the new simulator, the ESD robustness of Schottky-type p-GaN gate HEMTs is evaluated. The dominant factors for ESD robustness are identified from the dynamic discharge processes
    • الموضوع:
      Capacitance; Electrostatic discharges; ESD simulator; GaN HEMT; Human body model; MOSFET; Relays; SiC MOSFET; Silicon carbide; Standards; Switches; Article
    • Availability:
      Open access content. Open access content
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.hkust.edu.hk:1783.1-137103
      IEEE Electron Device Letters, v. 45, (6), June 2024, article number 10504537, p. 1056-1059
      0741-3106
      1558-0563
      1440207148
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1440207148
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