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Gate-Defined Topological Josephson Junctions in Bernal Bilayer Graphene

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اقرأ أكثر حفظ في قائمتي
  • المؤلفون: Xie, Yingming; Lantagne-Hurtubise, Étienne; Young, Andrea F.; Nadj-Perge, Stevan; Alicea, Jason
  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    http://repository.hkust.edu.hk/ir/Record/1783.1-133016
    https://doi.org/10.1103/PhysRevLett.131.146601
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0031-9007&rft.volume=131&rft.issue=14&rft.date=2023&rft.spage=&rft.aulast=Xie&rft.aufirst=Ying-Ming&rft.atitle=Gate-Defined+Topological+Josephson+Junctions+in+Bernal+Bilayer+Graphene&rft.title=Physical+Review+Letters
    http://www.scopus.com/record/display.url?eid=2-s2.0-85175090832&origin=inward
  • معلومة اضافية
    • Publisher Information:
      American Physical Society 2023
    • نبذة مختصرة :
      Recent experiments on Bernal bilayer graphene (BLG) deposited on monolayer WSe2 revealed robust, ultraclean superconductivity coexisting with sizable induced spin-orbit coupling. Here, we propose BLG/WSe2 as a platform to engineer gate-defined planar topological Josephson junctions, where the normal and superconducting regions descend from a common material. More precisely, we show that if superconductivity in BLG/WSe2 is gapped and emerges from a parent state with intervalley coherence, then Majorana zero-energy modes can form in the barrier region upon applying weak in-plane magnetic fields. Our results spotlight a potential pathway for "internally engineered"topological superconductivity that minimizes detrimental disorder and orbital-magnetic-field effects. © 2023 American Physical Society.
    • الموضوع:
      Article
    • Availability:
      Open access content. Open access content
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.hkust.edu.hk:1783.1-133016
      Physical Review Letters, v. 131, (14), October 2023, article number 146601
      0031-9007
      1415834046
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1415834046
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