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X-ray reciprocal space maps and x-ray scattering topographic observation of GaN layer on GaAs (001) in plasma-assisted molecular beam epitaxy

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  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    http://hdl.handle.net/10228/4540
    https://kyutech.repo.nii.ac.jp/?action=repository_action_common_download&item_id=3409&item_no=1&attribute_id=17&file_no=1
    https://doi.org/10.1063/1.2712166
    https://doi.org/10.1063/1.2712166
  • معلومة اضافية
    • Publisher Information:
      American Institute of Physics 2017-03-01 2007-05-21
    • Added Details:
      Graduate School of Engineering, Kyushu Institute of Technology
      Suzuki, Yoshifumi
      Shinbara, Masakazu
      Kii, Hideki
      Chikaura, Yoshinori
    • نبذة مختصرة :
      type:Journal Article
      We have characterized plasma-assisted N+ molecular beam epitaxy-grown polymorphous GaN epitaxial layer on GaAs by x-ray reciprocal mapping using four-circle x-ray diffractometer and a personal computer controlled x-ray scattering topography system by ourselves. x-ray reciprocal mapping indicates that GaN wurtzite epitaxial film was grown along only [[overline 1][overline 1]1] direction. While GaN wurtzite and zinc-blende crystals were contracted along the surface normal, those of lattice constants were expanded along lateral direction. The values of expansion were larger than our instrumental resolution. The lateral expansion rate of lattice constants in GaN wurtzite was larger than that in GaN zinc blende. It was found that zinc-blende phase was unevenly distributed, but wurtzite one was uniformly distributed by growth condition.
    • الموضوع:
      gallium compounds; III-V semiconductors; wide band gap semiconductors; semiconductor epitaxial layers; X-ray scattering; X-ray diffraction; X-ray crystallography; lattice constants; Journal Article; VoR
    • Note:
      English
    • Other Numbers:
      JPNII oai:irdb.nii.ac.jp:01216:0000927221
      Journal of Applied Physics, 101(6), 063516-
      1389679772
    • Contributing Source:
      NATIONAL INST OF INFO
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1389679772
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