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Characterization of Low-Frequency Noise in Polycrystalline Silicon Thin-Film Transistors Under Different Temperature

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  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    https://repository.hkust.edu.hk/ir/Record/1783.1-113226
    https://doi.org/10.1109/ISNE48910.2021.9493595
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Yang&rft.aufirst=&rft.atitle=Characterization+of+Low-Frequency+Noise+in+Polycrystalline+Silicon+Thin-Film+Transistors+under+Different+Temperature&rft.title=2021+9th+International+Symposium+on+Next+Generation+Electronics%2C+ISNE+2021
    http://www.scopus.com/record/display.url?eid=2-s2.0-85112363907&origin=inward
  • معلومة اضافية
    • Publisher Information:
      Institute of Electrical and Electronics Engineers 2021
    • Added Details:
      Yang, Yuyang
      Zhang, Meng
      Zeng, Yuhuang
      Xia, Zhihe
      Qian, Letong
      Yan, Yan
      Wong, Man
      Liou, Juin Jei
      Kwok, Hoi Sing
    • نبذة مختصرة :
      In this work, the low-frequency (f) noise in polycrystalline silicon thin-film transistors (TFTs) under the environmental temperature of 300 K and 373 K is characterized and analyzed. The behaviors of the low-f noise obey the classical 1/f theory. The carrier number fluctuation model is found to be the dominant mechanism. The density of defect states inside the devices increases from 2.66 × 1016 cm-3eV-1 to 6.66 × 1017 cm-3eV-1 when the substrate temperature increases from 300 K to 373 K. Violent lattice vibration at high temperature may be responsible for degenerated device mobility and increased low-f noise. © 2021 IEEE.
    • الموضوع:
      1/f noise theory; Lattice vibration; Low-frequency noise; Polycrystalline silicon; Thin-film transistors; Conference paper
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.hkust.edu.hk:1783.1-113226
      2021 9th International Symposium on Next Generation Electronics, ISNE 2021, July 2021, article number 9493595
      2378-8593
      2378-8607
      1363084662
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1363084662
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