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Latest progress in gallium-oxide electronic devices
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- المؤلفون: Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takahiro; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao
- نوع التسجيلة:
Electronic Resource
- الدخول الالكتروني :
https://repository.hkust.edu.hk/ir/Record/1783.1-120612
https://doi.org/10.1117/12.2292666
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0277-786X&rft.volume=&rft.issue=&rft.date=2018&rft.spage=&rft.aulast=Higashiwaki&rft.aufirst=&rft.atitle=Latest+progress+in+gallium-oxide+electronic+devices&rft.title=Proceedings+of+SPIE+-+The+International+Society+for+Optical+Engineering
http://www.scopus.com/record/display.url?eid=2-s2.0-85047382811&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000453074500003
- معلومة اضافية
- Publisher Information:
SPIE 2018
- نبذة مختصرة :
Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported. © Copyright 2018 SPIE.
- الموضوع:
- Note:
English
- Other Numbers:
HNK oai:repository.hkust.edu.hk:1783.1-120612
Proceedings of SPIE - The International Society for Optical Engineering, v. 10533, February 2018, article number 105330O
0277-786X
1363079008
- Contributing Source:
HONG KONG UNIV OF SCI & TECH, THE
From OAIster®, provided by the OCLC Cooperative.
- الرقم المعرف:
edsoai.on1363079008
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