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Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

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اقرأ أكثر حفظ في قائمتي
  • المؤلفون: Yang, Yuyang; Zhang, Meng; Lu, Lei; Wong, Man; Kwok, Hoi Sing
  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    https://repository.hkust.edu.hk/ir/Record/1783.1-117027
    https://doi.org/10.1109/TED.2022.3148697
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0018-9383&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Yang&rft.aufirst=Y&rft.atitle=Low-Frequency+Noise+in+Bridged-Grain+Polycrystalline+Silicon+Thin-Film+Transistors&rft.title=IEEE+TRANSACTIONS+ON+ELECTRON+DEVICES
    http://www.scopus.com/record/display.url?eid=2-s2.0-85125346077&origin=inward
    http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000758745400001
  • معلومة اضافية
    • Publisher Information:
      Ieee-inst Electrical Electronics Engineers Inc 2022
    • نبذة مختصرة :
      In this work, low-frequency noise (LFN) of bridged-grain (BG) polycrystalline silicon thin-film transistors (TFTs) is characterized and studied for the first time. The noise power spectral density (PSD) of drain current follows the classical 1/f noise theory. The carrier number with the correlated mobility fluctuation model dominates the device 1/f noise. Compared with normal TFTs, BG TFTs show a much smaller level of LFN, which is mainly attributed to grain boundary (GB) barrier lowering and trap density reduction.
    • الموضوع:
      Thin film transistors; Silicon; Logic gates; 1; F noise; Scattering; Resists; Performance evaluation; F noise theory; Bridged-grain (BG); Low-frequency noise (LFN); Polycrystalline silicon; Thin-film transistors (TFTs); Article
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.hkust.edu.hk:1783.1-117027
      IEEE Transactions on Electron Devices, v. 69, (4), April 2022, article number 9715259, p. 1984-1988
      0018-9383
      1557-9646
      1363076853
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1363076853
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