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Conformal and superconformal chemical vapor deposition of silicon carbide coatings

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  • معلومة اضافية
    • Publisher Information:
      Linköpings universitet, Tunnfilmsfysik Linköpings universitet, Tekniska fakulteten Linköpings universitet, Halvledarmaterial Linköpings universitet, Kemi SGL Carbon GmbH, Germany SGL Carbon GmbH, Germany SGL Carbon GmbH, Germany A V S AMER INST PHYSICS 2022
    • نبذة مختصرة :
      The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a low-temperature, low-pressure chemical vapor deposition (CVD) setting relevant for electronic materials in micrometer or submicrometer scale vias and trenches, are tested here in a high-temperature, moderate pressure CVD setting relevant for hard coatings in millimeter-scale trenches. Conformal and superconformal deposition of polycrystalline silicon carbide (SiC) can be accomplished at deposition temperatures between 950 and 1000 degrees C with precursor partial pressure higher than 20 Pa and an optional minor addition of HCl as a growth inhibitor. The conformal deposition at low temperatures is ascribed to slower kinetics of the precursor consumption along the trench depth, whereas the impact of high precursor partial pressure and addition of inhibitor is attributable to surface site blocking. With the slower kinetics and the site blocking from precursor saturation leading the growth to nearly conformal and the possibly preferential inhibition effect near the opening than at the depth, a superconformal SiC coating with 2.6 times higher thickness at the bottom compared to the top of a 1 mm trench was achieved. Published under an exclusive license by the AVS.
      Funding Agencies|SGL CARBON GmbH
    • الموضوع:
      Tribology (Interacting Surfaces including Friction, Lubrication and Wear); Tribologi (ytteknik omfattande friktion, nötning och smörjning); Article in journal; info:eu-repo/semantics/article; text
    • الرقم المعرف:
      10.1116.6.0001909
    • Note:
      application/pdf
      English
    • Other Numbers:
      UPE oai:DiVA.org:liu-187711
      0000-0002-7171-5383
      doi:10.1116/6.0001909
      ISI:000838416200001
      1348931295
    • Contributing Source:
      UPPSALA UNIV LIBR
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1348931295
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