Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

On-wafer Micromachined Waveguide Characterization with CPW Probe to Rectangular Waveguide Transition up to 500 GHz

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Publisher Information:
      KTH, Mikro- och nanosystemteknik
    • نبذة مختصرة :
      We report on coplanar waveguide to micromachined waveguide transitions for on-wafer device characterization. The transitions are designed in a silicon micromachined waveguide technology using silicon on insulator wafers together with the devices under test. A previous design at 220–330 GHz with in-band radiation characteristic is modified to eliminate the radiation and allow it to be scaled to higher frequencies. Simulation results for 220–330 GHz and 330–500 GHz are obtained, and the transition has an insertion loss of better than 0.5 and 1.2 dB, respectively. The transition is fabricated and characterized at 220–330 GHz, with an insertion loss of better than 0.7 dB and a return loss in excess of 10 dB over the whole band.
      QC 20201118
    • الموضوع:
      Coplanar waveguide (CPW) probe; silicon micromachining; submillimeter wave; terahertz; transition; waveguide probe; waveguide; Electrical Engineering, Electronic Engineering, Information Engineering; Elektroteknik och elektronik; Manuscript (preprint); info:eu-repo/semantics/preprint; text
    • Availability:
      Open access content. Open access content
      info:eu-repo/semantics/restrictedAccess
    • Note:
      English
    • Other Numbers:
      UPE oai:DiVA.org:kth-284677
      0000-0001-5662-6748
      0000-0002-8514-6863
      0000-0002-7033-2452
      0000-0002-8264-3231
      0000-0003-3339-9137
      1235092309
    • Contributing Source:
      UPPSALA UNIV LIBR
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1235092309
HoldingsOnline