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Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

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  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    http://repository.ust.hk/ir/Record/1783.1-85864
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=38&rft.issue=7&rft.date=2017&rft.spage=894&rft.aulast=Xia&rft.aufirst=Zhihe&rft.atitle=Characteristics+of+Elevated-Metal+Metal-Oxide+Thin-Film+Transistors+Based+on+Indium-Tin-Zinc+Oxide&rft.title=IEEE+ELECTRON+DEVICE+LETTERS
    http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000404349000017
    http://www.scopus.com/record/display.url?eid=2-s2.0-85028383651&origin=inward
  • معلومة اضافية
    • Publisher Information:
      2017
    • Added Details:
      Xia, Zhihe
      Lu, Lei
      Li, Jiapeng
      Feng, Zhuoqun
      Deng, Sunbin
      Wang, Sisi
      Kwok, Hoi Sing
      Wong, Man
    • نبذة مختصرة :
      Based on the distinct effects of oxidizing thermal annealing on the properties of zinc oxide and indium-gallium-zinc oxide (IGZO) under covers of different gas-permeabilities, the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture has been proposed and demonstrated using IGZO as the channel material. However, the speculation that the EMMO architecture is more generally applicable to semiconducting metal oxides other than IGZO has yet to be verified. Presently reported is an EMMO TFT with a modified structure employing indium-tin-zinc oxide as the channel material. The resulting TFT exhibited good performance metrics: a relatively higher field-effect mobility of 23.2 +/- 0.8 cm (2)/Vs, an ON/OFF current ratio of at least 3.1 x 10(10), a pseudo subthreshold slope of 165 +/- 15mV/decade, a width-normalized OFF-state current of at most 8.1 x 10(-19)A/μm, and robust stability against gate-bias stress.
    • الموضوع:
      Indium-tin-zinc oxide (ITZO); Thin-film transistors (TFTs); Low off-state current; Elevated-metal; Article
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.ust.hk:1783.1-85864
      IEEE Electron Device Letters, v. 38, (7), July 2017, article number 7932500, p. 894-897
      0741-3106
      1558-0563
      https://doi.org/10.1109/LED.2017.2707090
      1007129175
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.on1007129175
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