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Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide
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- نوع التسجيلة:Electronic Resource
- الدخول الالكتروني :
http://repository.ust.hk/ir/Record/1783.1-85864 http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=38&rft.issue=7&rft.date=2017&rft.spage=894&rft.aulast=Xia&rft.aufirst=Zhihe&rft.atitle=Characteristics+of+Elevated-Metal+Metal-Oxide+Thin-Film+Transistors+Based+on+Indium-Tin-Zinc+Oxide&rft.title=IEEE+ELECTRON+DEVICE+LETTERS http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000404349000017 http://www.scopus.com/record/display.url?eid=2-s2.0-85028383651&origin=inward
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