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Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

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  • معلومة اضافية
    • Additional Titles:
      Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
    • Publisher Information:
      American Association for the Advancement of Science (AAAS) 2014-11-21T16:52:10Z 2014-11-21T16:52:10Z 2014-11 2014-06
    • نبذة مختصرة :
      Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T′ structure, namely, 1T′-MX[subscript 2] with M = (W, Mo) and X = (Te, Se, S). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T′-MX[subscript 2] and 2D dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.
      National Science Foundation (U.S.) (Award DMR-1120901)
      United States. Dept. of Energy. Division of Materials Sciences and Engineering (Award DE-SC0010526)
      National Science Foundation (U.S.) (Grant DMR-1231319)
    • الموضوع:
      Article; http://purl.org/eprint/type/JournalArticle
    • Availability:
      Open access content. Open access content
      Creative Commons Attribution-Noncommercial-Share Alike
      http://creativecommons.org/licenses/by-nc-sa/4.0
    • Note:
      application/pdf
      en_US
    • Other Numbers:
      MYG oai:dspace.mit.edu:1721.1/91679
      0036-8075
      1095-9203
      Qian, X., J. Liu, L. Fu, and J. Li. “Quantum Spin Hall Effect in Two-Dimensional Transition Metal Dichalcogenides.” Science (November 2014): n. pag.
      896819608
    • Contributing Source:
      MASSACHUSETTS INST OF TECHNOL LIBRS
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.ocn896819608
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