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FERROELECTRIC BISMUTH TITANATE SUPERCONDUCTOR (Y-BA-CU-O) THIN-FILM HETEROSTRUCTURES ON SILICON

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اقرأ أكثر حفظ في قائمتي
  • المؤلفون: RAMESH, R.; INAM, A.; WILKENS, B.; CHAN, WK; SANDS, T.; TARASCON, JM; FORK, DK; GEBALLE, TH; EVANS, J.; BULLINGTON, J.
  • نوع التسجيلة:
    Electronic Resource
  • الدخول الالكتروني :
    http://repository.ust.hk/ir/Record/1783.1-58963
    http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=59&rft.issue=14&rft.date=1991&rft.spage=1782&rft.aulast=RAMESH&rft.aufirst=R&rft.atitle=FERROELECTRIC+BISMUTH+TITANATE+SUPERCONDUCTOR+%28Y-BA-CU-O%29+THIN-FILM+HETEROSTRUCTURES+ON+SILICON&rft.title=Applied+physics+letters
    http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=A1991GH40900044
  • معلومة اضافية
    • Publisher Information:
      1991
    • نبذة مختصرة :
      The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0-degrees-1.2-degrees for the bismuth titanate layer and 0.6-degrees-0.8-degrees for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45-degrees to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.
    • الموضوع:
      Article
    • Availability:
      Open access content. Open access content
    • Note:
      English
    • Other Numbers:
      HNK oai:repository.ust.hk:1783.1-58963
      Applied physics letters, v. 59, (14), September 1991, p. 1782-1784
      0003-6951
      https://doi.org/10.1063/1.106199
      895603506
    • Contributing Source:
      HONG KONG UNIV OF SCI & TECH, THE
      From OAIster®, provided by the OCLC Cooperative.
    • الرقم المعرف:
      edsoai.ocn895603506
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