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INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY

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اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • بيانات النشر:
      MIREA - Russian Technological University, 2013.
    • الموضوع:
      2013
    • Collection:
      LCC:Chemistry
    • نبذة مختصرة :
      Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.
    • File Description:
      electronic resource
    • ISSN:
      2410-6593
      2686-7575
    • Relation:
      https://www.finechem-mirea.ru/jour/article/view/535; https://doaj.org/toc/2410-6593; https://doaj.org/toc/2686-7575
    • الرقم المعرف:
      edsdoj.7b5ee1c7e6b4c6db7db4f5c56f54097