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A Low Overhead and Double-Node-Upset Self-Recoverable Latch

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  • معلومة اضافية
    • Contributors:
      Anhui University Hefei; Hefei University of Technology (HFUT); Anhui Polytechnic University; Test and dEpendability of microelectronic integrated SysTems (LIRMM; Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM); Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM); Kyushu Institute of Technology (Kyutech)
    • بيانات النشر:
      HAL CCSD
    • الموضوع:
      2023
    • Collection:
      Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe)
    • الموضوع:
    • نبذة مختصرة :
      With the rapid advancement of semiconductor technologies, integrated circuits, especially storage elements (e.g., latches) have become increasingly vulnerable to soft errors. In order to effectively tolerate double-node-upsets (DNUs) caused by radiation and reduce the delay and area of latches, this paper proposes a DNU self-recoverable latch with low overhead in terms of power and area. The proposed latch mainly comprises seven 2-input C-elements and two inverters to achieve DNU self-recovery. Simulation results show that the proposed latch can recover from all possible DNUs and that it can reduce delay by 45.71%, power by 29.13%, area by 65.93%, and areapower-delay-product by 87.42% on average compared to typical existing DNU self-recoverable latches.
    • Relation:
      lirmm-04241214; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04241214; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04241214/document; https://hal-lirmm.ccsd.cnrs.fr/lirmm-04241214/file/Xiafan-ITC-Asia-DNU-w.pdf
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.FEF0BEDC