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High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition

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  • معلومة اضافية
    • بيانات النشر:
      Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
    • الموضوع:
      2013
    • Collection:
      Forschungszentrum Jülich: JuSER (Juelich Shared Electronic Resources)
    • الموضوع:
    • نبذة مختصرة :
      Thin-film silicon tandem solar cells based on a hydrogenated amorphous silicon (a-Si:H) top-cell and a hydrogenated microcrystalline silicon (μc-Si:H) bottom-cell are a promising photovoltaic technology as they use a combination of absorber materials that is ideally suited for the solar spectrum. Additionally, the involved materials are abundant and non-toxic which is important for the manufacturing and application on a large scale. One of the most important factors for the application of photovoltaic technologies is the cost per watt. There are several ways to reduce this figure: increasing the efficiency of the solar cells, reducing the material consumption and increasing the throughput of the manufacturing equipment. The use of very-high frequencies has been proven to be beneficial for the material quality at high deposition rates thus enabling a high throughput and high solar cell efficiencies. In the present work a scalable very-high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique for state-of-the-art solar cells is developed. Linear plasma sources are applied which facilitate the use of very-high frequencies on large areas without compromising on the homogeneity of the deposition process. The linear plasma sources require a dynamic deposition process with the substrate passing by the electrodes in order to achieve a homogeneous deposition on large areas. State-of-the-art static radio-frequency (RF) PECVD processes are used as a referencein order to assess the potential of a dynamic VHF-PECVD technique for the growth of high-quality a-Si:H and $\mu$c-Si:H absorber layers at high rates. In chapter 4 the influence of the deposition process of the $\mu$c-Si:H i-layer on the solar cell performance is studied for static deposition processes. It is shown that the correlationbetween the i-layer growth rate, its crystallinity and the solar cell performance is similar for VHF- and RF-PECVD processes despite the different electrode configurations, excitation frequencies and process regimes. ...
    • Relation:
      info:eu-repo/semantics/altIdentifier/hdl/2128/15814; info:eu-repo/semantics/altIdentifier/issn/1866-1793; info:eu-repo/semantics/altIdentifier/isbn/978-3-89336-892-1; https://juser.fz-juelich.de/record/838894; https://juser.fz-juelich.de/search?p=id:%22FZJ-2017-07400%22
    • الدخول الالكتروني :
      https://juser.fz-juelich.de/record/838894
      https://juser.fz-juelich.de/search?p=id:%22FZJ-2017-07400%22
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.F18315F