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Top-down integration of an hBN quantum emitter in a monolithic photonic waveguide

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  • معلومة اضافية
    • Contributors:
      Groupe d'Etude de la Matière Condensée (GEMAC); Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS); Laboratoire de physique de l'ENS - ENS Paris (LPENS); Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL; École normale supérieure - Paris (ENS-PSL); Université Paris Sciences et Lettres (PSL)-Université Paris Sciences et Lettres (PSL)-École normale supérieure - Paris (ENS-PSL); Université Paris Sciences et Lettres (PSL)-Université Paris Sciences et Lettres (PSL); National Institute for Materials Science (NIMS); ANR-21-CE47-0004,E-SCAPE,Sources de photons uniques reproductibles activées par faisceau d'électrons dans le nitrure de bore hexagonal(2021)
    • بيانات النشر:
      HAL CCSD
      American Institute of Physics
    • الموضوع:
      2023
    • Collection:
      Université de Versailles Saint-Quentin-en-Yvelines: HAL-UVSQ
    • نبذة مختصرة :
      International audience ; Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step toward deterministic quantum photonic circuits in hBN.
    • Relation:
      info:eu-repo/semantics/altIdentifier/arxiv/2304.00130; hal-04149508; https://hal.science/hal-04149508; https://hal.science/hal-04149508/document; https://hal.science/hal-04149508/file/Main%20text.pdf; ARXIV: 2304.00130
    • الرقم المعرف:
      10.1063/5.0152721
    • الدخول الالكتروني :
      https://doi.org/10.1063/5.0152721
      https://hal.science/hal-04149508
      https://hal.science/hal-04149508/document
      https://hal.science/hal-04149508/file/Main%20text.pdf
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.EAC1CB25