Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • Contributors:
      UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
    • بيانات النشر:
      I E E E
    • الموضوع:
      2021
    • Collection:
      DIAL@UCL (Université catholique de Louvain)
    • نبذة مختصرة :
      The reduction of substrate RF losses and nonlinearities is key to enable high-performance GaN-on-Si HEMT based RF front-end modules. In this paper, the impact of the epitaxial III-N buffer layers on substrate RF losses and harmonic distortion is studied experimentally using coplanar waveguide (CPW) structures. In contrast to a SiO2/Si stack, a strong hysteresis in the RF losses (quantified using effective resistivity (rho_eff) of the HEMT stack is observed when the chuck DC bias is swept. A comparative analysis of various material stacks suggests that the hysteresis originates from the large time constants (much larger than 1 s) associated with the traps in the III-N layers. Harmonic distortion, on the other hand, shows much weaker hysteresis effect than reff during chuck bias sweeps
    • Relation:
      info:eu-repo/grantAgreement/FNRS/FRIA/; boreal:250702; http://hdl.handle.net/2078.1/250702
    • الرقم المعرف:
      10.1109/ESSDERC53440.2021.9631822
    • الدخول الالكتروني :
      http://hdl.handle.net/2078.1/250702
      https://doi.org/10.1109/ESSDERC53440.2021.9631822
    • Rights:
      info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.E8D11CDA