Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
اقرأ أكثر حفظ في قائمتي
  • معلومة اضافية
    • بيانات النشر:
      Springer
    • الموضوع:
      2012
    • Collection:
      LeibnizOpen (The Leibniz Association)
    • الموضوع:
      530
    • نبذة مختصرة :
      In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands. ; publishedVersion
    • File Description:
      application/pdf
    • الرقم المعرف:
      10.34657/4403
    • Rights:
      CC BY 2.0 Unported ; https://creativecommons.org/licenses/by/2.0/
    • الرقم المعرف:
      edsbas.E60E4DBF