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Design and layout strategies for integrated frequency synthesizers with high spectral purity

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  • معلومة اضافية
    • الموضوع:
      2019
    • Collection:
      TU Berlin: Deposit Once
    • نبذة مختصرة :
      Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich. ; This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. ; Design guidelines for fractional-N phase-locked loops with a high spectral purity of the output signal are presented. Various causes for phase noise and spurious tones (spurs) in integer-N and fractional-N phase-locked loops (PLLs) are briefly described. These mechanisms include device noise, quantization noise folding, and noise coupling from charge pump (CP) and reference input buffer to the voltage-controlled oscillator (VCO) and vice versa through substrate and bondwires. Remedies are derived to mitigate the problems by using proper PLL parameters and a careful chip layout. They include a large CP current, sufficiently large transistors in the reference input buffer, linearization of the phase detector, a high speed of the programmable frequency divider, and minimization of the cross-coupling between the VCO and the other building blocks. Examples are given based on experimental PLLs in SiGe BiCMOS technologies for space communication and wireless base stations. ; BMBF, 03ZZ0512A, Zwanzig20 - Verbundvorhaben: fast-spot; TP1: Modularer Basisband- Prozessor mit extrem hohen Datenraten, sehr kurzen Latenzzeiten und SiGe-Analog-Frontend-IC-Fertigung bei >200 GHz Trägerfrequenz
    • File Description:
      application/pdf
    • ISSN:
      1759-0795
      1759-0787
    • Relation:
      https://depositonce.tu-berlin.de/handle/11303/9092; http://dx.doi.org/10.14279/depositonce-8193
    • الرقم المعرف:
      10.14279/depositonce-8193
    • الدخول الالكتروني :
      https://depositonce.tu-berlin.de/handle/11303/9092
      https://doi.org/10.14279/depositonce-8193
    • Rights:
      http://rightsstatements.org/vocab/InC/1.0/
    • الرقم المعرف:
      edsbas.E2878520