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High resolution electron microscopy of GaAs capped GaSb nanostructures

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  • معلومة اضافية
    • Contributors:
      Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte; Universidad de Sevilla. TEP123: Metalurgia e Ingeniería de los Materiales; SANDiE European Network of Excellence Contract No. NMP4-CT-2004-500101; The Spanish MEC Grant No. TEC2005-05781-C03-01; The Spanish MEC Grant No. TEC2005-05781-C03-02; The Spanish MEC Grant No. TEC2008-06756-C03-02/TEC; The Spanish MEC Grant No. NAN2004-09109-C04-01; Consolider-Ingenio 2010 CSD2006-00019; The CAM Grant No. S 0505ESP 0200; Junta de Andalucía project PAI05-TEP-00383; Junta de Andalucía project PAI05-TEP-03516
    • بيانات النشر:
      American Institute of Physics
    • الموضوع:
      2023
    • Collection:
      idUS - Deposito de Investigación Universidad de Sevilla
    • نبذة مختصرة :
      We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small with heights of about 1 nm GaAsₓxSb₁₋ₓ nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsₓxSb₁₋ₓ nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
    • Relation:
      Applied Physics Letters, 94 (043114).; NMP4-CT-2004-500101; TEC2005-05781-C03-01; TEC2005-05781-C03-02; TEC2008-06756-C03-02/TEC; NAN2004-09109-C04-01; CSD2006-00019; S 0505ESP 0200; PAI05-TEP-00383; PAI05-TEP-03516; https://pubs.aip.org/aip/apl/article/94/4/043114/337629/High-resolution-electron-microscopy-of-GaAs-capped; https://idus.us.es/handle//11441/150409
    • Rights:
      Attribution-NonCommercial-NoDerivatives 4.0 Internacional ; http://creativecommons.org/licenses/by-nc-nd/4.0/ ; info:eu-repo/semantics/openAccess
    • الرقم المعرف:
      edsbas.D767A66