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Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties
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- معلومة اضافية
- بيانات النشر:
University of Twente
- الموضوع:
2004
- Collection:
University of Twente Publications
- نبذة مختصرة :
This thesis presents results of a study focused on the growth processes of tungsten nitride silicide films by CVD; tungsten nitride and tungsten carbidonitride films by ALD
- File Description:
application/pdf
- Relation:
http://doc.utwente.nl/48234/1/thesis_Bystrova.pdf; http://purl.utwente.nl/publications/48234
- الرقم المعرف:
edsbas.D6F2103B
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