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Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

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  • معلومة اضافية
    • الموضوع:
      2010
    • Collection:
      Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
    • نبذة مختصرة :
      Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.
    • Relation:
      APPLIED SURFACE SCIENCE; Zheng GL, Yang AL, Wei HY, Liu XL, Song HP, Guo, Y, Jia CH, Jiao CM, Yang SY, Zhu QS, Wang ZG.Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition.APPLIED SURFACE SCIENCE,2010,256(8):2606-2610; http://ir.semi.ac.cn/handle/172111/10206
    • الرقم المعرف:
      edsbas.D10759E3